2012
DOI: 10.4313/teem.2012.13.2.102
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Effect of Film Thickness on Structural, Electrical, and Optical Properties of Sol-Gel Deposited Layer-by-layer ZnO Nanoparticles

Abstract: The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spincoating technique were studied and now presented. Thicknesses of the thin films were varied by increasing thenumber of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterizethe structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra andphotoluminescence spectra for the optical properties of the ZnO thin film… Show more

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Cited by 61 publications
(37 citation statements)
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“…Figure 5 depicts the energy band gap value for ZnO thin film which varies from 3.23 eV -3.40 eV which is very close to work done by Ilican et al [7]. The slight deviation in the energy band gap from this work compared with the previous work [7] [10] [11] may be due to the fact that the values of band gap depend on many factors likecoating speed (rpm), the granular structure, the nature and concentration of precursors, the structural defects and the crystal structure of the films. The band gap difference between the film and bulk ZnO is due to the grain boundary, the stress and the interaction potentials between defects and the host materials in the films [12].…”
supporting
confidence: 63%
“…Figure 5 depicts the energy band gap value for ZnO thin film which varies from 3.23 eV -3.40 eV which is very close to work done by Ilican et al [7]. The slight deviation in the energy band gap from this work compared with the previous work [7] [10] [11] may be due to the fact that the values of band gap depend on many factors likecoating speed (rpm), the granular structure, the nature and concentration of precursors, the structural defects and the crystal structure of the films. The band gap difference between the film and bulk ZnO is due to the grain boundary, the stress and the interaction potentials between defects and the host materials in the films [12].…”
supporting
confidence: 63%
“…In the undoped ZnO, the trapped carriers in the grain boundaries could be responsable for the increase of the resistivity [34]. In the Ho-doped ZnO series, the insertion of the holmium ions in the ZnO matrix is expected to be rather difficult due to the higher ionic radius of the Ho 3+ ions (0.904 Å) as compared with the Zn ionic radius (0.704 Å).…”
Section: Resultsmentioning
confidence: 99%
“…The desired gas concentration was generated by mixing proper flows of synthetic dry air and ethanol (SIAD, Italy, www. siad.com) [24].…”
Section: Methodsmentioning
confidence: 98%