Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films

Lai, Chun‐Hung; Liu, Chih‐Yi; Hsu, Cheng‐Hsing; Lee, Yi-Mu; Lin, Jenn-Sen; Yang, Hsiwen

doi:10.1016/j.tsf.2012.09.025

Cited by 14 publications

(6 citation statements)

References 21 publications

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“…Thus, they have contributed to our understanding of the complex resistive switching phenomena in TiO 2 . Meanwhile, only a few studies have systematically addressed the effect of thermal annealing at reduced oxygen partial pressures on the resistive and resistive switching properties of TiO 2 thin films (Lai et al, 2013a , b ; Nelo et al, 2013 ). Seemingly, this issue also remains underexplored.…”

Section: Discussionmentioning

confidence: 99%

“…Annealing in reducing atmospheres affects the concentration of charged point defects and thus the resistive switching. Despite many experimental studies, including the post-fabrication thermal annealing stage (typically at 400–600°C) under vacuum (Schmidt et al, 2015 ), nitrogen (Seo et al, 2011 ; Cortese et al, 2016 ; Regoutz et al, 2016 ), argon (Nelo et al, 2013 ), or N 2 + H 2 (4–5%) gas mixtures (Yang et al, 2008 ; Miller et al, 2010 ), only a few studies have systematically addressed the effects of thermal treatment under various annealing atmospheres on the resistive switching behavior of TiO 2 memristive devices (Lai et al, 2013a , b ; Nelo et al, 2013 ).…”

Section: Synthesis and Fabricationmentioning

confidence: 99%

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Memristive TiO2: Synthesis, Technologies, and Applications

et al. 2020

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Titanium dioxide (TiO 2 ) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO 2 thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO 2 . Following a brief introduction, we provide an overview of the major areas of application of TiO 2 -based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.

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Section: Discussionmentioning

confidence: 99%

Section: Synthesis and Fabricationmentioning

confidence: 99%

Memristive TiO2: Synthesis, Technologies, and Applications

et al. 2020

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“…[1][2][3][4] RRAM devices with a simple metal/ insulator/metal structure exhibit resistive switching with the application of dc voltages or pulses. Many materials, such as Cu x O, 5-7) TiO x , 8,9) and NiO x , 10,11) have demonstrated this resistive switching effect. These different materials exhibit different switching behaviors owing to differences in their switching mechanisms.…”

Section: Introductionmentioning

confidence: 97%

Improvement of switching uniformity in Cu/SiO₂/Pt resistive memory achieved by voltage prestress

Liu

Lin

Liu

et al. 2015

Jpn. J. Appl. Phys.

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A Cu/SiO 2 /Pt structure was fabricated to investigate its resistive switching characteristics. The application of DC voltages with different polarities allowed for the reversible manipulation of the structure's resistance. This resistive switching phenomenon is the result of the formation and rupture of Cu conducting filaments near the Cu/SiO 2 interface. However, significant switching dispersion occurred during successive switching cycles, which resulted in operational difficulties and switching failure. In this study, a voltage prestress was applied to the structure in an attempt to minimize the switching dispersion. A statistical technique was used to analyze the status of formation/rupture sites, and a schematic model is proposed to explain the reason for the dispersion improvement. It is suggested that the voltage prestress builds nonconnected filaments and reduces the number of sites of filament formation/rupture. This reduction in the number of sites leads to reduced switching dispersion.

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“…[47][48][49][50] The effect of resistive switching is demonstrated by many materials, such as binary oxides (TiO 2 , ZnO, HfO 2 , SiO 2 ), nitrides (AlN, Si 3 N 4 , WN, CuN), perovskites (BaTiO 3 , BiFeO 3 ) etc. [51][52][53][54][55][56][57][58][59][60][61][62][63][64][65] Among these materials, TiO 2 is often the material of choice, since it has a wide bandgap, is simple to manufacture, and its structural, defect-chemical, and electrical properties are well understood, making it one of the promising candidates for implementation in ReRAM devices. [66,67] Among the mechanisms of resistive switching considered above, the VCM mechanism often applies to titanium dioxide.…”

Section: Introductionmentioning

confidence: 99%

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

Tominov

Avilov

Вакулов

et al. 2022

Adv Elect Materials

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Electrochemical anodization is a powerful method for the preparation of oxide thin films with controlled thickness, structure, and composition and proves as a promising approach to be applied to memristive devices. Here, experimental studies on titanium oxide nanoscale structures produced by local anodic oxidation and the influence of the thickness on the memristive properties are presented. Controllable preparation of forming‐free memristive cells with switching voltages less than 3 V are demonstrated. The chemical composition and oxidation state of the elements in the TiOx nanostructures are analyzed by means of X‐ray photoelectron spectroscopy, which reveals the formation of TiO2 (458.4 eV), Ti2O3 (456.6 eV), and TiO (454.8 eV). The increasing thickness of the devices from 4.5 ± 0.7 to 7.9 ± 0.3 nm leads to a decrease in the OFF to ON resistance ratio from 250 to 10.7, respectively. The mechanism of formation and resistive switching in the anodic devices is also discussed. The results can be applied to the design and development of technological processes for memristive structure manufacturing based on electrochemical oxidation.

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Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films

Cited by 14 publications

References 21 publications

Memristive TiO2: Synthesis, Technologies, and Applications

Memristive TiO2: Synthesis, Technologies, and Applications

Improvement of switching uniformity in Cu/SiO₂/Pt resistive memory achieved by voltage prestress

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

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Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films

Cited by 14 publications

References 21 publications

Memristive TiO2: Synthesis, Technologies, and Applications

Memristive TiO2: Synthesis, Technologies, and Applications

Improvement of switching uniformity in Cu/SiO2/Pt resistive memory achieved by voltage prestress

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

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Improvement of switching uniformity in Cu/SiO₂/Pt resistive memory achieved by voltage prestress