Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation

Jelenković, Emil V.; Ristić, Goran S.; Jevtic, M.M.; Jha, Shrawan Kumar; Videnović-Mišić, Mirjana; Pejović, Momčilo M.; Tong, Kin‐Fai

doi:10.1088/0022-3727/44/1/015101

Cited by 7 publications

(13 citation statements)

References 31 publications

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“…It is known that the Si-H bonds are easily broken during irradiation. Since the photon energy of the 254 nm ultraviolet laser (4.88 eV) in this study is greater than the dissociation energy of Si-H bond (3.30 eV) [11], Si-H bonds locating at the poly-Si grain boundaries and poly-Si/SiO2 interface would be weaken and consequently broken by the UV irradiation. The interface trap densities (Nit) of n-channel LTPS-TFT after UV irradiation extracted by the SS method were also shown in Fig.…”

Section: Resultsmentioning

confidence: 88%

“…In this work, we investigate this idea by irradiating hydrogenated n-channel LTPS-TFTs with UV light to a cumulative dose of 16 J/cm 2 . Some reports showed that hydrogenated TFT devices are more vulnerable to irradiation [10], [11], because the silicon hydrogen bonds (Si-H) are easily broken during irradiation. The application of MOSFET dosimeter is based on converting the threshold voltage shift (Vth), induced by radiation, into the radiation dose (D).…”

Section: Introductionmentioning

confidence: 99%

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Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters

Hong

Xiao²,

Lin

2021

IEEE J. Electron Devices Soc.

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N-channel thin film transistors (TFTs) fabricated with hydrogenated low temperature polycrystalline silicon (LTPS) were exposed to ultraviolet (UV) radiation to a cumulative dose up to 16 J/cm 2 . The effect of radiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage (Vth) which was found to have exponentially linear dependence on irradiation dose. This, together with obtained low fading, suggests that hydrogenated n-channel low temperature polycrystalline silicon TFTs have potential as UV radiation dosimeters. In addition, the physical mechanisms of the UV induced electrical degradation were analyzed in terms of the radiation generated traps at poly-Si grain boundary and poly-Si and gate oxide insulator (poly-Si/SiO2) interface INDEX TERMS Ultraviolet radiation, hydrogenated LTPS-TFTs, threshold voltage, UV dosimeters.

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Section: Resultsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters

Hong

Xiao²,

Lin

2021

IEEE J. Electron Devices Soc.

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“…There is significant interest for implementation of thin film transistors (TFTs) in irradiation environment [1][2][3][4]. Generally, there is insufficient research in this direction, including gate insulator which is the most sensitive component of TFTs [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…However, TFTs may be prone to grain boundary trap formation in active polysilicon [3,4]. If generated, the extraction of stress-induced positive oxide charge in TFTs by McWhorter's approach is complicated [4], because of which it is important to study the reliability of deposited oxides in MOS structures. Using MOS structures gives also an opportunity for a fast evaluation of near border traps in deposited oxide, defects that are largely overlooked in studies of stability of TFTs.…”

Section: Introductionmentioning

confidence: 99%

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Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler–Nordheim constant current stress

Jelenković

Kovačević

Jha

et al. 2013

Microelectronic Engineering

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Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation

Cited by 7 publications

References 31 publications

Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters

Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters

Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler–Nordheim constant current stress

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

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