Effect of Ga doping on optical transmittance and electrical conductivity of CdS thin films

In this research, thin film composite structures were used to prepare optoelectronic devices from bare and Bi‐substituted p‐CuO/n‐ZnO systems. The p‐CuO/n‐ZnO composite thin film structures were prepared by the SILAR technique, and the influences of two different Bi contents on the structure and main physical performances of the samples were investigated. The X‐ray diffraction (XRD) technique showed that the composited thin film materials were multiphased in rutile hexagonal (wurtzite) phase (ZnO) and monoclinic tenorite phase (CuO) type crystal structure. The obtained surface morphological results presented that the structure exhibits an almost homogeneous, plate‐like surface distribution, and depending on the increase of Bi concentration, the plate‐like sheet area widens from ~2.5 μm to 10 μm and the layer boundaries decrease. FT‐IR and Raman spectroscopy were used to investigate the various vibration and Raman active phonon modes of Bi:p‐CuO/n‐ZnO nanostructured heterostructures. For a comprehensive analysis of the optical bandgap of the fabricated composite samples, the estimated values were obtained from the Tauc plot. Produced samples exhibited an Ohmic behavior and dc resistivity values of films can be determined via Ohm′s Law. The adjusted sheet resistance value of 11.51 MΩ/sq when the content of Bi 3.0 % in the growth bath.

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Investigation of Multi‐Phase Structure and Optoelectronic Performance of Bi‐Doped (Cu−Zn) Oxide Composite Thin Films

Altınay

Akkaya

Aydın

et al. 2023

ChemElectroChem

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Optimizing Crystal Orientation and Defect Mitigation in Antimony Selenide Thin‐Film Solar Cells through Buffer Layer Energy Band Adjustment

Yang,

Zhang,

Zhu

et al. 2024

Small

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Antimony selenide (Sb2Se3) has sparked significant interest in high‐efficiency photovoltaic applications due to its advantageous material and optoelectronic properties. In recent years, there has been considerable development in this area. Nonetheless, defects and suboptimal [hk0] crystal orientation expressively limit further device efficiency enhancement. This study used Zinc (Zn) to adjust the interfacial energy band and strengthen carrier transport. For the first time, it is discovered that the diffusion of Zn in the cadmium sulfide (CdS) buffer layer can affect the crystalline orientation of the Sb2Se3 thin films in the superstrate structure. The effect of Zn diffusion on the morphology of Sb2Se3 thin films with CdxZn1‐xS buffer layer has been investigated in detail. Additionally, Zn doping promotes forming Sb2Se3 thin films with the desired [hk1] orientation, resulting in denser and larger grain sizes which will eventually regulate the defect density. Finally, based on the energy band structure and high‐quality Sb2Se3 thin films, this study achieves a champion power conversion efficiency (PCE) of 8.76%, with a VOC of 458 mV, a JSC of 28.13 mA cm−2, and an FF of 67.85%. Overall, this study explores the growth mechanism of Sb2Se3 thin films, which can lead to further improvements in the efficiency of Sb2Se3 solar cells.

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Optical, structural, electrical, and morphological properties of (Ga:B) co-doped CdS thin films

Ahmad,

Aljarrah,

Bani-Salameh

et al. 2024

J Mater Sci: Mater Electron

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Effect of Ga doping on optical transmittance and electrical conductivity of CdS thin films

Cited by 3 publications

References 26 publications

Investigation of Multi‐Phase Structure and Optoelectronic Performance of Bi‐Doped (Cu−Zn) Oxide Composite Thin Films

Investigation of Multi‐Phase Structure and Optoelectronic Performance of Bi‐Doped (Cu−Zn) Oxide Composite Thin Films

Optimizing Crystal Orientation and Defect Mitigation in Antimony Selenide Thin‐Film Solar Cells through Buffer Layer Energy Band Adjustment

Optical, structural, electrical, and morphological properties of (Ga:B) co-doped CdS thin films

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