Effect of Ga<sup>+</sup> focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure.

Voznyuk, G. V.; Levitskii, I. V.; Mitrofanov, M. I.; Nikolaev, D. N.; Evtikhiev, V. P.

doi:10.1088/1742-6596/1038/1/012080

Cited by 3 publications

(4 citation statements)

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“…Simultaneously, the time-resolved PL measurement reveals that the PL decay rate rises with the increase of ion dose (Figure b), which suggests that more carrier trap defects are formed under higher ion-dose irradiation. As the binding energy of the atoms in the CsPbBr 3 target sample (several electronvolt) is much smaller than the kinetic energy of Ga + ion at 30 keV, the atoms in CsPbBr 3 will be readily displaced from their lattice positions by the elastic core collision resulting from energy and momentum exchanges when the Ga + ion beam is directed onto the target sample. , Moreover, the incident ions after collision and the target atoms knocked free from the lattice sites may still have enough energy to displace more target atoms, which in turn continue to dislocate yet other atoms. , As a result, a “displacement cascade” is formed upon Ga + ion irradiation, which generates plenty of defects including vacancies and interstitials, leading to the PL quenching phenomenon. In general, the penetration depth of the Ga + ion beam lies in the range of several to tens of nanometers, so that the irradiation-induced quenching effects primarily occurs on the surface of the sample .…”

Section: Results and Discussionmentioning

confidence: 99%

“…[14,21] Moreover, the incident ions after collision and the target atoms knocked free from the lattice sites may still have enough energy to displace more target atoms, which in turn continue to dislocate yet other atoms. [14,22] As a result, a "displacement cascade" is formed upon Ga + ion irradiation, which generates plenty of defects including vacancies and interstitials, leading to the PL quenching phenomenon. In general, the penetration depth of the Ga + ion beam lies in the range of several to tens of nanometers, so that the irradiation induced quenching effects primarily occurs on the surface of sample.…”

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confidence: 99%

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Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

Wang

Gu²,

Ren

et al. 2019

ACS Appl. Mater. Interfaces

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All-inorganic cesium lead halide perovskites hold great promise for the development of next-generation optoelectronics. However, it remains unexplored how the energetic ions will impact CsPbX3, which may largely limit the application potentials. In this work, we for the first time investigate the interaction between the CsPbX3 and high-energy gallium ions in a broad range of ion doses provided by a focused ion beam (FIB) system. We found that the optical properties of CsPbX3 are highly sensitive to the energetic Ga + ions due to the relatively vulnerable ionic bonding. Specifically, even low-dose Ga + irradiation (~110 15 ions/cm 2 ) can lead to more than one-order-of-magnitude reduction in the photoluminescence (PL) intensity, whcih can be attributed to the combined effects of the formation of vacancy/interstitial defects, generation of metallic Pb-related nonradiative recombination centers and crystal-to-amorphization transition. With the increase of ion dose (~10 17 ions/cm 2 ), the morphology of CsPbX3 can be dramatically altered due to the ion sputtering effect. We demonstrate that both low-and high-dose FIB treatment can be important for realizing the application prospects of CsPbX3 in optical security protection and system-on-a-chip compatible microlasers. Our results offer significant information about the ion impacts on CsPbX3 and offer an enabling tool to manipulate the emission and lasing from CsPbX3, which could push ahead the potential of CsPbX3 in photonics and optoelectronics.

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Section: Results and Discussionmentioning

confidence: 99%

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confidence: 99%

Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

Wang

Gu²,

Ren

et al. 2019

ACS Appl. Mater. Interfaces

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“…Etched samples were annealed for 20 min at a temperature of 300 • C. This annealing regime provides an opportunity to remove the amorphized surface layer without recovery of radiation defects [9,10]. Photoluminescence was excited by a semiconductor laser operating at a wavelength of 808 nm with a spot diameter of 80 µm directly in the active GaAs layer of the Al 0.18 Ga 0.82 As/GaAs/Al 0.18 Ga 0.82 As heterostructure.…”

Section: Resultsmentioning

confidence: 99%

On the effect of etching with a focused Ga-=SUP=-+-=/SUP=- ion beam in the energy range 12-30 keV on the luminescent properties of the Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As/GaAs/Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As heterostructure

et al. 2022

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The effect of ion energy in a focused ion beam in the range 12-30 keV on the formation depth of nonradiative recombination centers during etching of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As double heterostructure has been studied. It is shown that an increase in the ion energy leads to an increase in the concentration and propagation depth of radiation defects. It was found that during etching of focused ion beam with ion energies above 15 keV, the depth of formation of radiation defects exceeds 900 nm, which does not correspond to the calculations in the Stopping and Range of Ions in Matter. Keywords: focused ion beam, radiation defects, photoluminescence, annealing, AlGaAs/GaAs.

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“…The electrical contacts from the p-side of the studied microlasers were divided into two sections of different areas using the focused ion beam (FIB). It is well known, that accelerated ions can penetrate deep into the material and, thus, form defects there [27][28][29]. The typical penetration depth is at the level of hundreds of nm, depending on the accelerating voltage and ion type.…”

Section: Methodsmentioning

confidence: 99%

Effect of non-uniform carrier injection on two-state lasing in quantum dot microdisks with split electrical contact

Karaborchev,

Makhov,

Shandyba

et al. 2024

J. Phys. D: Appl. Phys.

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The emission characteristics of InAs/InGaAs quantum dot microdisk lasers of different cavity diameters with a top split electrical contact formed using the focused ion beam technique are investigated. The dependences of the threshold currents of two-state lasing (i.e. currents corresponding to the start of the ground- and excited-state lasing) for microdisks of 24 and 28 μm diameters on the electrical contact area are presented. The contact area was found to influence on the threshold currents of two-state lasing in microdisks. It is shown that a decrease in the area of the injecting electrical contact leads to a decrease in the current corresponding to the start of excited-state lasing, while the ground-state lasing threshold remains virtually unchanged. The temperature evolution of the threshold currents for two-state lasing was also studied in the microdisks with different electrical contact areas. We demonstrate that the use of contacts of different areas is a method of controlling the threshold currents of two-state lasing and can be used at engineering of quantum dot lasers intended, for example, for multi-level signal transmission with wavelength multiplexing by switching from the ground-state to excited-state lasing.

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Effect of Ga⁺ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure.

Cited by 3 publications

References 4 publications

Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

On the effect of etching with a focused Ga-=SUP=-+-=/SUP=- ion beam in the energy range 12-30 keV on the luminescent properties of the Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As/GaAs/Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As heterostructure

Effect of non-uniform carrier injection on two-state lasing in quantum dot microdisks with split electrical contact

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Effect of Ga+ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure.

Cited by 3 publications

References 4 publications

Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

Perovskite–Ion Beam Interactions: Toward Controllable Light Emission and Lasing

On the effect of etching with a focused Ga-=SUP=-+-=/SUP=- ion beam in the energy range 12-30 keV on the luminescent properties of the Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As/GaAs/Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As heterostructure

Effect of non-uniform carrier injection on two-state lasing in quantum dot microdisks with split electrical contact

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Effect of Ga⁺ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure.