Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature

“…The different samples are labeled # S 1 , # S 2 , # S 3 and # S 4 and correspond to growth temperature of 700, 750, 800 and 850 C, respectively. Details of the growth process of the samples can be found elsewhere [21]. The growth was in-situ monitored by single wavelength (l ¼ 632.8 nm) He-Ne laser reflectometry operated at normal incidence.…”

Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures

“…High-quality wurtzite GaN has been demonstrated on Si, SiC, and sapphire substrates using MBE and MOCVD, but it has remained difficult to achieve GaN epitaxial growth directly on conventional III–V materials due to the difference in crystal structure. − In this work, we have demonstrated crystalline GaN nanostructures epitaxially grown on GaInP 2 without the formation of extensive defects and dislocations using plasma-assisted MBE. High-resolution electron microscopy imaging of the GaN/3J structure confirms a highly crystalline GaN nanostructure epitaxially grown on a GaInP 2 surface with furcated topography.…”

Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates

“…In our previous study, we investigated the substrate orientation effects on the quality of the overgrown GaN layers. Our results showed that both (111) and (112) GaAs substrate orientations and high growth temperature (> 850 °C) favor the hexagonal phase, whereas the cubic GaN phase was obtained on (001) and (113) GaAs substrates at low growth temperatures [15,16].…”

“…The growth temperature of 800 °C was found to improve the cubic phase structure of GaN samples. Indeed, we reported in our previous studies that high growth temperature (> 800 °C) favor the GaN growth with hexagonal structure, whereas the GaN cubic structure was favored at low temperature [15]. The samples were characterized in-situ by Laser reflectometry (LR) and ex-situ by scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution xray diffraction (HRXRD) and depth-resolved cathodoluminescence (CL).…”

“…Thus, for the (11n) orientations the probability of desorbing an N atom is greater since it is less bound. In addition, the generation of (001) plane terraces terminated by (111) step edges [15] could favor the incorporation of species.…”