Effect of Gain Saturation in InP-Photonic Band Gap Active Waveguides

Calò, Giovanna; D’Orazio, A.; Sario, M. De; Marrocco, V.; Mescia, Luciano; Petruzzelli, V.; Prudenzano, Francesco; Vincenti, Maria Antonietta

doi:10.1109/icton.2008.4598620

Cited by 4 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The other physical and geometrical parameters are: core thickness d c = 110.5 nm, refractive index n AlGaAs = 3.285 and thickness d cl = 0.220 µm of the cladding, ridge width w = 2 μm and the two values of the ridge height h 1 = 0.1 µm and h 2 = 1.0 µm. The interaction of the injected current with the active 4-QW structure, has been accounted by using the following rate equations [10,17]:…”

Section: Brief Theorymentioning

confidence: 99%

See 1 more Smart Citation

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Calò

Alexandropoulos

Petruzzelli

2014

2014 16th International Conference on Transparent Optical Networks (ICTON)

View full text Add to dashboard Cite

The temperature performance of GaInNAs-GaInAs multi-quantum-well active ridge waveguides, patterned with a periodic one-dimensional grating and a defective region placed in the central layer, has been evaluated to design efficient optical active switches/modulators at the operation wavelength λ ≅ 1.289 μm. At environmental temperature T = 298 K, by properly designing the periodic grating and changing the injected current from I OFF = 0 to I ON = 11 mA, efficient switching characteristics occur in terms of crosstalk, contrast ratio, modulation depth and bandwidth. The proposed modulator preserves these high switching performances even over a wide temperature range. As an example, in the ON state we have verified that the transmittance T ON assumes values within the range 3.2 -3.6 for temperature values ranging from T = 298 K to T = 320 K, whereas T ON reduces to about 2.0 by increasing the temperature up to T = 400 K. Moreover, the full width at half maximum increases from FWHM ≅ 0.91 nm for T = 298 K to FWHM ≅ 1.15 nm for T = 400 K. INTRODUCTIONThe development of optical InP-based devices in optical access network seems to be limited from the influence of the temperature on their transmission performances. In fact, as an example, at high operating temperatures the lasing properties of the InGaAsP/inP lasers drastically worsen, mainly due to the insufficient electron confinement for the small bandgap discontinuity in the conduction band. Moreover, in relatively long-haul and high bit-rate transmissions in the optical fiber communication systems, the instability of the laser oscillation wavelength, due to the temperature changes, could increase the effects of dispersion of the optical fibers. Improvements of the lasing properties of the long-wavelength InGaAsP/inP lasers can be obtained by using strained multi-quantum layers, but the performances at high temperature is still unsatisfactory [1]. Enormous increasing of the high-temperature performance of long-wavelength lasers, can be obtained by using novel material systems based on GaInNAs [1,2]. This realizes very good electron confinement in the active region and, thanks to a large conduction band offset, leads to lasers with excellent high-temperature performance. Dilute nitrides proved advantageous in different applications in optical communication systems such as Semiconductor Optical Amplifiers (SOA) [3], optical active switches [4], vertical-cavity surface-emitting lasers (VCSELs) [5], ridge lasers [6], and disk lasers [7]. Moreover, thank to the design flexibility offered by dilute nitrides, solar cells [8] have been demonstrated.In this paper an active one-dimensional Photonic Crystal (PhC), made of a periodic one-dimensional (1-D) grating of GaInNAs-GaInAs Multi Quantum Wells (MQW) ridge waveguides, has been investigated. In more recent years, the PhCs have offered novel possibilities for controlling [9][10][11][12] and filtering [13-16] the propagating light signals in integrated optical devices even in presence of active materials [17,18].In particular,...

show abstract

Section: Brief Theorymentioning

confidence: 99%

“…In more recent years, the PhCs have offered novel possibilities for controlling [9][10][11][12] and filtering [13-16] the propagating light signals in integrated optical devices even in presence of active materials [17,18].…”

Section: Introductionmentioning

confidence: 99%

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Calò

Alexandropoulos

Petruzzelli

2014

2014 16th International Conference on Transparent Optical Networks (ICTON)

View full text Add to dashboard Cite

show abstract

“…In particular, the behaviour of the examined structure is deeply affected by the interaction of the injected current with the active materials acting along the whole structure. This effect is accounted by introducing in the computer code the following rate equations in the stationary analysis [18,19]:…”

Section: Design Of the Active Wdm Filtermentioning

confidence: 99%

Active WDM Filter on Dilute Nitride Quantum Well Photonic Band Gap Waveguide

Calò¹,

Alexandropoulos²,

Petruzzelli³

2012

PIER Letters

View full text Add to dashboard Cite

A defective Photonic Band Gap device based on dilute nitrides is proposed as a high performance active wavelength filter for wavelength division multiplexing applications. The analyzed structure is made of GaInNAs-GaInAs multi quantum well ridge waveguides in which a geometrical defect in the periodic lattice induces selective transmission spectral regions centered at different wavelengths inside the photonic band gap. The multi-channel filter performances are evaluated as a function of both the defect length and the injected current value. The analysis is performed by using proprietary codes, based on the Bidirectional Beam Propagation Method with the Method of Lines introducing the rate equations. Highly selective 11-channel active filter with minimum value of the bandwidth at half-height ∆λ = 0.105 nm with gain G = 16.51 dB has been assessed.

show abstract

“…Moreover, in presence of dielectric discontinuity this algorithm solves both the forward (+z) and the backward (−z) propagations along the longitudinal z direction of the waveguiding structure. The MoL-BBPM procedure, applied iteratively by evaluating the whole electromagnetic field in the structure, stops when the change of the electromagnetic field, at the generic i-th iteration, in the output section is less than a given tolerance ε [26]:…”

Section: Brief Theorymentioning

confidence: 99%

“…Moreover, the PBG devices are even more interesting when exploiting different material properties, e.g., in the case of liquid crystal infiltration or nonlinear materials [23,24], which allow the realization of efficient tunable filters and frequency converters. Moreover, they exhibit a more efficient interaction between the light and the active materials, thanks to their capability of reducing the group velocity at certain wavelengths [25,26].…”

Section: Introductionmentioning

confidence: 99%

Temperature Performance of Gainnas-Based Photonic Crystal Waveguide Modulators

Calò¹,

Alexandropoulos²,

Petruzzelli³

2016

PIER M

View full text Add to dashboard Cite

Abstract-The temperature performances of GaInNAs-based semiconductor devices, for next generation communication networks and photonic integrated circuits, are investigated. In particular, GaInNAs-GaInAs Multi Quantum Well active ridge waveguides, patterned with a periodic onedimensional grating and an active defective region placed in the central layer, have been designed for efficient active optical switches and modulators. The switching mechanism was obtained around the Bragg wavelength λ ∼ = 1.2896 µm at room temperature T = 298 K by properly designing the periodic grating and changing the injected current density from J OF F = 0 mA/µm 2 to J ON = 0.496 mA/µm 2 . The proposed device exhibits high performances in terms of crosstalk, contrast ratio, and modulation depth. The temperature performance of the proposed device is analyzed in the range T = 298 K-400 K, showing a good stability of the figures of merit: crosstalk CT, contrast ratio CR, and bandwidth ∆λ. In particular, the CT varies at about 1.2 dB in the whole temperature range, whereas CR and ∆λ experience, respectively, a maximum variation of 25% and 30% of their maximum values.

show abstract

Effect of Gain Saturation in InP-Photonic Band Gap Active Waveguides

Cited by 4 publications

References 12 publications

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Active WDM Filter on Dilute Nitride Quantum Well Photonic Band Gap Waveguide

Temperature Performance of Gainnas-Based Photonic Crystal Waveguide Modulators

Contact Info

Product

Resources

About