Effect of gamma-irradiation on the optical properties of Ge As40−S60 glasses

Shpotyuk, O.; Kovalskiy, A.; Skordeva, E.; Vateva, E.; Arsova, D.; Golovchak, R.; Vakiv, M.

doi:10.1016/s0921-4526(99)00212-4

Cited by 28 publications

(25 citation statements)

References 6 publications

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“…Namely, the radiation-induced FSDP changes mainly occur in the As-enriched glass composition (x = 16) to be in a good agreement with the photoinduced FSDP changes in the g-As 2 S 3 bulk samples reported by Tanaka [4,5]. Obviously, the g-Ge 16 As 24 S 60 , possessing also a high sensitivity to 60 Co gamma radiation influence [8][9][10][11][12][13], can be considered as a good representative for investigation of the FSDP-related correlations in -irradiated chalcogenide glasses.…”

Section: Introductionsupporting

confidence: 84%

“…2. As the slope of fundamental optical absorption edge decreases upon radiation, the -induced disorder takes place as related with intrinsic structural changes in the glass network (see, e.g., [8][9][10][11] and references therein). Thus, the detected reduction of the slope of () curve in the fundamental optical absorption edge region after -irradiation, resulting in the maximum radiation-induced optical darkening effect (h) max , can be interpreted as caused by the radiation-induced defect formation processes occurring in the structural network of glass.…”

Section: Resultsmentioning

confidence: 99%

“…As 2 O 3 crystals and S phases, impact on the FSDP and next XRD peak [1], it is understandable that this disadvantage makes the -irradiated g-As 2 S 3 sample to be as not the best model object at XRD studying the radiation-structural changes, including the FSDP-related correlations, first of all, in glassy chalcogenides. As noted, the As-enriched Ge-As-S chalcogenide glasses, not showing the white oxidized layer upon radiation due to decomposition-oxidation reactions [8][9][10][11][12][13], can be selected as better candidates for this purpose. As shown in [15], the XRD study of -irradiated/annealed gGe 16 As 24 S 60 , which corresponds to (As 2 S 3 ) 0.6 (Ge 2 S 3 ) 0.4 alloy, with a dominant structure based on AsS 3/2 pyramids likely to g-As 2 S 3 [25], allows plausibly detecting the radiation-structural changes, including the FSDP-related ones, in the As-S sub-system of chalcogenide glasses.…”

Section: Resultsmentioning

confidence: 99%

“…2 [1]). On the other hand, the uncontrolled radiationinduced oxidation means that the As 2 O 3 crystals and S phases have to be always deleted in order to examine carefully the radiation-structural changes in g-As 2 S 3 ; while, other chalcogenides, for example, the glasses of Ge-As-S system, do not show oxidized layer at the surface upon radiation [8][9][10][11][12][13], and, thus, they do not need washing and polishing procedure to be measured in the -irradiated state. In other words, the g-As 2 S 3 cannot be considered as the best model object for identification of radiation-structural changes using XRD, despite a high sensitivity of glassy arsenic trisulphide to -irradiation [14].…”

Section: Introductionmentioning

confidence: 99%

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Radiation-induced optical darkening and oxidation effects in As2S3 glass

Kavetskyy¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The long-wave shift of fundamental optical absorption edge with decreasing the sample's transparency in the saturation region in the As 2 S 3 bulk glass (2 mm thick) due to radiation treatment by 60 Co -quanta with the average energy E = 1.25 MeV and accumulated dose  = 2.41 MGy is reported. The red shift (radiation-induced optical darkening effect) is detected within the period of 2-3 months after -irradiation able to cause the well-known static radiation-induced optical effect. The detected decrease in the slope of () curve in the fundamental optical absorption edge region after -irradiation, resulting in the maximum difference of optical transmittance for the unirradiated and -irradiated samples (h) max at the level 33.5%, can be interpreted within the radiationinduced defect formation processes occurring in the structural network of glass. At the same time, as expected from literature, the observed decrease in the sample's transparency at the level 33% upon radiation is plausibly caused by the accompanying radiation-induced oxidation processes that are the most probably related with appearance of As 2 O 3 (arsenolite) crystals and S phases at the surface of -irradiated sample, forming a white oxidized layer visible to the eye. The disadvantage of As 2 S 3 glass to be selected as the best model object for X-ray diffraction study of -radiation-structural changes, especially in respect to the first sharp diffraction peak, is considered.

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Section: Introductionsupporting

confidence: 84%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Radiation-induced optical darkening and oxidation effects in As2S3 glass

Kavetskyy¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Однак, точність вимірювання поглинутих доз радіації дозиметричними системами на ос-нові ХС суттєво обмежена за рахунок постра-діаційних часових змін параметра χ, який мо-жна розділити на дві компоненти -змінну, тобто затухаючу з часом приблизно протягом 2-3 місяців після опромінення, та залишкову або статичну [7]:…”

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POST-RADIATION RELAXATION OF RADIATION-INDUCED CHANGES OF OPTICAL ABSORPTION IN Ge-As-S CHALCOGENIDE GLASS

Kovalskiy¹,

Shpotyuk²,

Golovchak³

et al. 2014

SEMST

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Проаналізовано особливості використання радіаційно-чутливих середовищ на основі халькогенідних стекол системи As-Ge-S для реєстрації високоенергетичного γ-випроміню-вання. Показано, що суттєвою перевагою досліджуваних об'єктів у порівнянні з оксидни-ми стеклами є вищий рівень вимірюваних доз, краща стійкість до дії агресивних зовнішніх факторів і нижча температура стирання радіаційно-індукованих змін в області краю фун-даментального оптичного поглинання. Недоліком дозиметричних систем на основі вказа-них халькогенідних стекол є температурна залежність та часова нестабільність радіацій-но-індукованих змін. Вплив нагріву зразка в процесі опромінення може бути виключений шляхом обмеження діапазону вимірюваних доз та їх потужностей. Пострадіаційну зміну контрольованого параметру в часі можна врахувати шляхом введення відповідного коре-ктуючого коефіцієнта. Встановлено, що релаксаційні процеси, відповідальні за пострадіа-ційні ефекти, описуються диференціальним рівнянням, характерним для бімолекулярного механізму рекомбінації, що свідчить про визначальну роль координаційних дефектів у формуванні радіаційно-індукованих змін.Ключові слова: дозиметрія, γ-випромінювання, халькогенідне скло, оптичне поглинан-ня, сенсор Summary POST-RADIATION RELAXATION OF RADIATION-INDUCED CHANGES OF OPTICAL ABSORPTION IN Ge-As-S CHALCOGENIDE GLASS A. P. Kovalskiy, O. I. Shpotyuk, R. Ya. Golovchak, M. M. VakivThe features of application of radiation-sensitive media based on chalcogenide glasses of AsGe-S system to registration of high-energy γ-radiation have been analyzed. It is shown that essential advantage of the investigated objects in comparison with oxide glasses consists in higher level of measured doses, better resistance to corrosive atmosphere and lower temperature for erasing of radiation-induced changes in the range of fundamental optical absorption edge. The temperature dependence and time instability of the observed radiation-induced changes are disadvantages of chalcogenide glasses. The influence of heating effects during irradiation can be excluded by limiting the range of measured doses and dose powers. The post-radiation time changes in the controlled parameter can be taken into account owing to appropriate correcting coefficient. It is established that relaxation processes responsible for post-radiation effects are described by dif-

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Application of Positron Annihilation Lifetime Technique for γ-Irradiation Stresses Study in Chalcogenide Vitreous Semiconductors

Shpotyuk¹,

Filipecki²,

Golovchak³

et al. 2002

Adv. Eng. Mater.

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The influence of γ‐irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As‐Ge‐S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and γ‐induced open volume defects. It is concluded that after γ‐irradiation of investigated materials the γ‐induced microvoids based on S1–, As2–, and Ge3– coordination defects play the major role in positron annihilation processes.

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Effect of gamma-irradiation on the optical properties of Ge As40−S60 glasses

Cited by 28 publications

References 6 publications

Radiation-induced optical darkening and oxidation effects in As2S3 glass

Radiation-induced optical darkening and oxidation effects in As2S3 glass

POST-RADIATION RELAXATION OF RADIATION-INDUCED CHANGES OF OPTICAL ABSORPTION IN Ge-As-S CHALCOGENIDE GLASS

Application of Positron Annihilation Lifetime Technique for γ-Irradiation Stresses Study in Chalcogenide Vitreous Semiconductors

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