Effect of gamma ray irradiation on structural and surface properties of c-axis oriented ZnO thin films

Kumar, Vinod

doi:10.1016/j.radphyschem.2021.109750

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…This result is consistent with that observed for various oxide thin films after γ-ray irradiation and was attributed to radiation-induced surface reorganization. 52,53 The exact physical mechanism responsible for the excellent radiation tolerance of p-type SnO X TFT under X-ray irradiation requires further investigation. However, considering that the VBM of SnO comprises the hybridized orbitals of Sn 5s and O 2p that are largely unaffected by the lattice disorder, 54,55 the insensitivity of the hole conduction path to an increase in the surface roughness or the lattice disorder in the SnO is considered as a possible mechanism for the radiation-hard properties of p-type SnO X TFTs under X-ray irradiation.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Yatsu

Lee

Kim

et al. 2022

ACS Appl. Electron. Mater.

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A radiation-hard oxide-thin-film transistor (TFT)-based complementary metal–oxide–semiconductor (CMOS) logic circuit composed of p-type tin oxide (SnO X ) and n-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was proposed. The chemical states and crystalline structure of oxide thin films and their surface morphologies were analyzed as a function of the X-ray irradiation dose, exhibiting excellent radiation stability and durability for both oxide thin films under X-ray irradiation. After X-ray irradiation at a very high dose, a slight change in the chemical states was observed in both thin films, that is, an increase in the oxygen vacancies and tin dioxide components in the SnO X thin films and in the oxygen vacancy components in the IGZO thin films. The change in the chemical states observed in both thin films after X-ray irradiation explained the slight X-ray-induced negative shift of the transfer curves for both oxide TFTs. The fabricated CMOS inverter exhibited typical voltage transfer characteristics and a maximum gain of ∼33.4 V/V at a supply voltage of 10 V, which were well sustained after X-ray irradiation, even at a high dose of 100 Gy. In this study, we show that oxide-TFT-based CMOS logic circuits can potentially be used to demonstrate high-performance and radiation-robust large-area electronic systems operating in harsh X-ray environments.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Yatsu

Lee

Kim

et al. 2022

ACS Appl. Electron. Mater.

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Uncovering the potential of yttrium doped zinc oxide nanoparticles as an efficient catalyst for photodegradation of recalcitrant pollutant and a contributor antibacterial property

Peechmani,

Makhtar,

Mansur

et al. 2024

Journal of Water Process Engineering

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Effect of Am-241 Irradiation on ZnO Crystallinity with Different Annealing Temperature

Amelia,

Rahastama,

Musyarofah

2024

SSP

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Am-241 is an alpha emitting isotope which can be used to fuel a nuclear battery via alphavoltaic effect by using a semiconductor to convert alpha radiation to electricity. The main issue of alphavoltaic battery is the radiation damage due to high energy alpha particle, resulted in a rapid decline in performance. Zinc oxide (ZnO) is known as a semiconductor with high radiation tolerance. In this study, the effect of annealing temperature to ZnO crystal was studied along with its alteration due to Am-241 irradiation overtime. The annealing temperatures were set at 450°C and 650°C. The irradiation process was carried out using Am-241 isotope for 12 days with an activity of 44.85 mCi and approximately 0.0866 MGy of absorbed dose. The crystal structure of fabricated and irradiated ZnO were investigated through X-ray Diffraction (XRD). The XRD diffraction pattern indicates that the crystal structure of ZnO is hexagonal wurtzite and still maintained after irradiation process. Raising the annealing temperature from 450°C to 650°C leads to a reduction in peak intensity. This change correlates with an increase in grain size post-irradiation. After exposure to alpha particle radiation, changes occurred in the diffraction peaks of ZnO. At 450°C annealing temperature, the intensity decreased by 94.822%, while at 650°C annealing temperature, the intensity decrease was 85.489%. This shows that increasing the annealing temperature can reduce the decrease in intensity after irradiation with alpha particles. The (002) plane shifted by 0.057˚ at 450°C annealing temperature and by 0.042˚ at 650°C after irradiation. In addition, the crystal lattice parameters increased after irradiation, which led to a change in the FWHM value and an increase in the crystal grain size.

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Effect of gamma ray irradiation on structural and surface properties of c-axis oriented ZnO thin films

Cited by 3 publications

References 16 publications

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Uncovering the potential of yttrium doped zinc oxide nanoparticles as an efficient catalyst for photodegradation of recalcitrant pollutant and a contributor antibacterial property

Effect of Am-241 Irradiation on ZnO Crystallinity with Different Annealing Temperature

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