Effect of gas atmospheres on degradation of MgO thin film magnetic tunneling junctions by deionized water

Tigunta, Siriporn; Sando, Daniel; Chanlek, Narong; Supadee, Laddawan; Pojprapai, Soodkhet

doi:10.1016/j.tsf.2020.138185

Cited by 2 publications

(2 citation statements)

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“…Then, MgO (30 nm) and Al 2 O 3 (20 nm) were deposited by RF magnetron sputtering at room temperature. The Al 2 O 3 encapsulation layer prevents a degradation of the MgO layer by water molecules due to a hygroscopic nature of the MgO layer. , Figure b shows a scanning electron microscope (SEM) image of the fabricated β-Ga 2 O 3 /MgO phototransistor. We also fabricated a reference β-Ga 2 O 3 phototransistor with nearly identical dimensions and channel thickness to investigate the effects of the MgO layer.…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga₂O₃/MgO Heterostructure-Based Phototransistor

Ahn

Lee

et al. 2021

ACS Photonics

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Deep-ultraviolet (DUV) photodetectors based on wide-band-gap semiconductors have attracted significant interest across a wide range of applications in the industrial, biological, environmental, and military fields due to their solar-blind nature. As one of the most promising wide-band-gap materials, β-Ga2O3 provides great application potential over detection wavelengths ranging from 230 to 280 nm owing to its superior optoelectronic performance, stability, and compatibility with conventional fabrication techniques. Although various innovative approaches and device configurations have been applied to achieve highly performing β-Ga2O3 DUV photodetectors, the highest demonstrated responsivity of the β-Ga2O3 photodetectors has only been around 105 A/W. Here, we demonstrate a β-Ga2O3 phototransistor with an ultrahigh responsivity of 2.4 × 107 A/W and a specific detectivity of 1.7 × 1015 Jones, achieved by engineering a photogating effect. A β-Ga2O3/MgO heterostructure with an Al2O3 encapsulation layer is employed not only to reduce photogenerated electron/hole recombination but also to suppress the photoconducting effects at the back-channel surface of the β-Ga2O3 phototransistor via a defect-assisted charge transfer mechanism. The measured photoresponsivity is almost 2 orders of magnitude higher than the highest previously reported value in a β-Ga2O3-based photodetector, to the best of our knowledge. We believe that the demonstrated β-Ga2O3/MgO heterostructure configuration, combined with its facile fabrication method, will pave the way for the development of ultrasensitive DUV photodetectors utilizing oxide-based wide-band-gap materials.

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Section: Resultsmentioning

confidence: 99%

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga₂O₃/MgO Heterostructure-Based Phototransistor

Ahn

Lee

et al. 2021

ACS Photonics

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“…Therefore, the oxygen nucleus will strengthen the bound of extranuclear electron, and the binding energy increases [ 59 , 60 ]. Figure 10 a–c show the content of O1 (lattice oxygen) and O2 (oxygen of vacancy and hydroxide) change with temperature from 300 °C to 500 °C under 1.0 M. Using data from previous research [ 23 , 61 , 62 ], the three kinds of peak positions can be determined as ~530 eV, ~531 eV and ~532 eV, respectively. The peak position of O2 is closer to oxygen vacancy when the annealing temperature is 300 °C and 500 °C.…”

Section: Resultsmentioning

confidence: 99%

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

Yang

Liang

et al. 2021

Membranes

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Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT. There is a conflict between a high relative dielectric constant and a wide band gap, so we solved this problem by using multiple metals to increase the entropy of the system. In this paper, we prepared zirconium-yttrium-aluminum-magnesium-oxide (ZYAMO) dielectric layers with a high relative dielectric constant using the solution method. The basic properties of ZYAMO films were measured by an atomic force microscope (AFM), an ultraviolet-visible spectrophotometer (UV-VIS), etc. It was observed that ZYAMO thin films had a larger optical band when the annealing temperature increased. Then, metal-insulator-metal (MIM) devices were fabricated to measure the electrical properties. We found that the leakage current density of the device is relatively lower and the ZYAMO thin film had a higher relative dielectric constant as the concentration went up. Finally, it reached a high relative dielectric constant of 56.09, while the leakage current density was no higher than 1.63 × 10−6 A/cm2@ 0.5 MV/cm at 1.0 M and 400 °C. Therefore, the amorphous ZYAMO thin films has a great application in the field of high permittivity request devices in the future.

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Effect of gas atmospheres on degradation of MgO thin film magnetic tunneling junctions by deionized water

Cited by 2 publications

References 59 publications

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga₂O₃/MgO Heterostructure-Based Phototransistor

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga₂O₃/MgO Heterostructure-Based Phototransistor

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

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Effect of gas atmospheres on degradation of MgO thin film magnetic tunneling junctions by deionized water

Cited by 2 publications

References 59 publications

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

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Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga₂O₃/MgO Heterostructure-Based Phototransistor

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga₂O₃/MgO Heterostructure-Based Phototransistor