Effect of gas composition and bias voltage on the structure and properties of <i>a</i>-C:H/SiO2 nanocomposite thin films prepared by plasma-enhanced chemical-vapor deposition

Lee, Jung H.; Lee, Young Ho; Farouk, Bakhtier

doi:10.1116/1.580191

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Cited by 7 publications

References 27 publications

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AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Wang

Chiou

Chang

et al. 2003

Journal of Elec Materi

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High-quality SiO 2 was successfully deposited onto GaN by photo-chemicalvapor deposition (photo-CVD) using a D 2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-m gate, it was found that the saturated I ds , maximum g m , and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

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AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Wang

Chiou

Chang

et al. 2003

Journal of Elec Materi

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STABILIZED sp2/sp3 CARBON AND METAL-CARBON COMPOSITES OF ATOMIC SCALE AS INTERFACE AND SURFACE-CONTROLLING DIELECTRIC AND CONDUCTING MATERIALS

Dorfman¹

2001

Handbook of Surfaces and Interfaces of Materials

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Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic

Lee

Chung

Moon

et al. 2006

Microelectronic Engineering

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Effect of gas composition and bias voltage on the structure and properties of a-C:H/SiO2 nanocomposite thin films prepared by plasma-enhanced chemical-vapor deposition

Abstract: Articles you may be interested inComparative study of the elastic properties of silicate glass films grown by plasma enhanced chemical vapor deposition J.Preparation of hydrogenated amorphous germanium nitrogen alloys by plasma enhanced chemical vapor deposition

Cited by 7 publications

References 27 publications

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

STABILIZED sp2/sp3 CARBON AND METAL-CARBON COMPOSITES OF ATOMIC SCALE AS INTERFACE AND SURFACE-CONTROLLING DIELECTRIC AND CONDUCTING MATERIALS

Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic

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