Effect of gas composition on the deposition of ZrC-C mixtures: The bromide process

Ogawa, Teiichiro; Ikawa, Katsuichi; Iwamoto, Kazumi

doi:10.1007/bf01028335

Cited by 21 publications

(20 citation statements)

References 7 publications

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“…Although the temperature range could be varied in different facilities or conditions, most successful CVD deposition practices for ZrC using ZrCl 4 -CH 4 -H 2 system were utilized in this temperature range. 11,15 The fact that the carbon deposition is the controlled process in ZrC deposition could also guide our deposition practice by using the fruitful knowledge of the carbon deposition process.…”

Section: Resultsmentioning

confidence: 99%

“…The various parameters such as temperature, deposition pressure, carbon source, and flux of gas precursors, have also been heavily investigated. 12,15,17 Thermodynamic studies of the ZrC deposition process have also been carried out in previous studies. 13,18,19 To better control the ZrC deposition process, it is necessary to understand the deposition mechanism.…”

Section: Introductionmentioning

confidence: 99%

“…It therefore is the most investigated deposition method for the preparation of ZrC coatings. The CVD processes-including chloride, 10-13 bromide, 14,15 and iodide 16 processes-have previously been examined. The various parameters such as temperature, deposition pressure, carbon source, and flux of gas precursors, have also been heavily investigated.…”

Section: Introductionmentioning

confidence: 99%

“…ZrC coatings have been grown by electron-beam bombardment, 6 laser cladding, 7 pulsed laser ablation-deposition, 8 magnetron sputter deposition, 9 and chemical vapor deposition (CVD). [10][11][12][13][14][15][16] Among these methods, CVD has advantages over the others in that it could be used to uniformly coat not only flat surfaces, but also complex-shaped components like particles and cutting tools. It therefore is the most investigated deposition method for the preparation of ZrC coatings.…”

Section: Introductionmentioning

confidence: 99%

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Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition

et al. 2008

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Zirconium carbide films were grown on graphite slices by chemical vapor deposition using methane, zirconium tetrachloride, and hydrogen as precursors. The growth rate of zirconium carbide films as a function of temperature was investigated. The morphologies of these films at different temperatures were also observed by scanning electron microscopy. The results indicated that the deposition of zirconium carbide was dominated by gas nucleation at temperatures below 1523 K, and by surface process at temperatures higher than 1523 K. By comparison of the deposition activation energies for zirconium carbide and deposited carbon, it was determined that the carbon deposition was the controlled process during the growing of zirconium carbide films. The effect of temperatures on the morphologies of zirconium carbide films was also discussed, based on the carbon deposition process.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition

et al. 2008

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“…This morphology is concerning to the different speed of nucleation for ZrC and pyrolytic carbon during the co-deposition process [24]. Speed of nucleation (dN/dt) can be described as Eq.…”

Section: Resultsmentioning

confidence: 99%

Preparation of ZrC nano-particles reinforced amorphous carbon composite coating by atmospheric pressure chemical vapor deposition

Sun

Xiong

Huang

et al. 2009

Applied Surface Science

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Morphologies of CVD ZrC crystals

Ogawa¹

1981

Phys. Stat. Sol. (a)

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Particulate ZrC crystals of well-defined morphologies are formed by chemical vapor deposition from the ZrBr,-CH,-H,-Ar system. The basic forms are considered to be the prisms of (110) axis having rhombic, pseudo-rhombic, and trigonal cross sections, which are bounded with four { l l l } , two { 111) and two {loo}, and two { 111} and one {loo} side faces, respectively. There are also cones presumably having (100) axis. Those prisms and cones are found growing from the same aggregate of crystals, indicating that the morphologies are not specific to the deposition site. Morphologies of the prisms are explained by the PBC theory, assuming the strong metal-metal and metal-non-metal bondings in the NaCl-type structure of ZrC. Stability of the { 111} face suggests negligible ionicity in ZrC. Spezielle ZrC-Kristalle mit wohldefinierter Morphologie werden durch chemische Abscheidungsverfahren aus der Dampfphase (CVD) aus dem ZrBr,-CH,-H,-Ar-Systm hergestellt. Es wird angenommen, daB die Grundformen Prismen von (1 10)-Achsen mit rhombischen, pseudo-rhombischen und trigonalenQuerschnitten sind, die durch vier { 111}-, zwei { 111)-und zwei { 100)-bzw. zwei { 111)und einer { 100}-Seitenfliiche bestehen. Es existieren auch Kegel, die wahrscheinlich (100)-Achsen besitzen. Es wird gefunden, daB diese Prismen und Kegel aus demselben Aggregat von Kristallen wachsen, was anzeigt, daO die Morphologien nicht spezifisch fir den Ablagerungsplatz sind. Die Morphologien der Prismen werden mit der PBC-Theorie erkliirt, wobei starke Metall-Metall-und Metall-Nichtmehllbindungen in der Struktur vom NaC1-Typ von ZrC angenommen werden. Die Stabilitiit der { 111)-Fliichen weist auf eine vernachliissigbare Ionisitit in ZrC hin.

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Effect of gas composition on the deposition of ZrC-C mixtures: The bromide process

Cited by 21 publications

References 7 publications

Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition

Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition

Preparation of ZrC nano-particles reinforced amorphous carbon composite coating by atmospheric pressure chemical vapor deposition

Morphologies of CVD ZrC crystals

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