2023
DOI: 10.3390/ma16062285
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Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)

Abstract: We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small negative shift under negative gate bias stress (NBS) and a large positive shift under positive gate bias stress (PBS) in transfer characteristic curves. In contrast, the FeOxTFTs show a small positive shift and a l… Show more

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