Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress

Abstract

Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress * Cao Yan-Rong(曹艳荣) a)b) † , He Wen-Long(何文龙) a) , Cao Cheng(曹 成) a) , Yang Yi(杨 毅) a) , Zheng Xue-Feng(郑雪峰) b) , Ma Xiao-Hua(马晓华) c) , and Hao Yue(郝 跃) b) a

Numerical Simulation and Analysis of the Airflow Field in the Crushing Chamber of the Hammer Mill

“…Based on the research on the process of particle crushing and discharging in the hammer mill, the airflow field can be divided into three regions for simulation analysis as shown in Figure . Region I represents the static pressure distribution of the airflow field in the rotor diameter range, where small particles become adhered to the rotor center, making it challenging to filter them out . Region II was made up of the circulation layer region along the screen surface, where particles were moved over the screen surface by the airfield drag force, and reduced the relative velocity between the hammers and the particles, making it difficult for the particles to be impact-crushed.…”

“…So, the amount of particles screened is influenced by the airflow in the circulation layer, inside and outside the screen aperture. − Meanwhile, researchers have proposed that the hammer mill should be equipped with a mass flow rate fan to work at the same time, which could change the airflow distribution in the crushing chamber, improving the efficiency of crushing and screening, and reducing overcrushing and temperature rising. Therefore, the hammer mills could crush efficiently, and uniformity of particle size distribution of crushed materials, and reduce energy consumption. , …”

“…Therefore, the hammer mills could crush efficiently, and uniformity of particle size distribution of crushed materials, and reduce energy consumption. 1 , 16 …”

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

“…4, and the negative oxide trap degradation almost dominates the source of the degradation for PBTI. [28,29] So, a negative oxide trap is critical for the analysis of the dependency of PBTI in n-FinFET. [3,30] All extracted V T BTI kinetics of p-FinFETs and n-FinFETs with different channel lengths (30 nm, 40 nm, 60 nm, and 100 nm) under −1/ + 1 V overdrive voltage stress and 125 • C are shown in Fig.…”

Theoretical study of mutual control mechanism between magnetization and polarization in multiferroic materials

“…[6] Moreover, because of the complex physical mechanism and the interesting phenomena of the multiferroic materials, theoretical researches of the ME effect are also attractive for fundamental physics. [7][8][9][10][11][12][13][14] Theoretical studies can be carried out by either macroscopic or microscopic approaches. The first theoretical attempt of studying the ME coupling proposed a term of α i j E i H j in the free energy based on group theory, [15] where E and H represented the electric and magnetic fields, respectively, and i and j label the Cartesian coordinates.…”