Effect of Gate Metal Work-function on Junctionless (JL) Nanowire GAA MOSFET Performance

Abstract

Metal gate technology is one of the promising methods used to increase the drain current by increasing the electrostatic controllability. Different metals have different work-function that controls the device performance very closely as gate to source voltage is the basic inputs for these. In this paper the dependency of gate metal work-function on device performance (both for nMOS and pMOS) is extensively investigated. The gate metal work-function value is taken as 4.2eV to 5.1eV with one increment to see the change in potential profile. With this condition, the IOn current, IOff current, threshold voltage, transconductance also calculated for these structures. A decrease value in drain current (1e-6 to 1e-7 A) is observed for both the cases with increase in work-function of gate metal. However, the Off current is getting better (1e-7 to 1e-18 A) while moving towards higher metal work-function values. As a result of which the IOn/IOff ratio increases which leads to higher device performances.