Effect of gate poly-silicon depletion on MOSFET input impedance

Bandi, S.P.R.; Washburn, C.; Mukund, P.R.; Kolník, J.; Paradis, Ken; Howard, S.; Burleson, J.

doi:10.1109/lmwc.2006.873454

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Device Fabrication and Thz Detection Results1

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2015

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“…3. The estimated Z gs (magnitude of complex impedance) of our low-impedance MOSFETs is below 1 k around 0.2 THz, while the conventional nanoscale MOSFETs with smaller device dimensions (L = W = 45, 65, 130 nm, T ox = 2.2 ∼ 3.2 nm [16]) show high Z gs above 1 k , which is reasonable range when compared with low-Z gs level in the multi-fingered (finger number NF > 10) RF MOSFETs [17] and single-fingered 130-nm MOSFETs with larger widths [18].…”

Section: Device Fabrication and Thz Detection Resultsmentioning

confidence: 76%

Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET

Ryu

Kim

Lee

et al. 2015

IEEE Electron Device Lett.

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We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (<1 k ) and integrating antennas with impedances of 50 and 100 , we found that our low-impedance MOSFETs have the input impedance criterion of 50 at 0.2 THz and the MOSFETs with thinner gate oxide show the highly enhanced plasmonic photoresponses at 50-antenna by 325 times from the result of the detector without antenna.

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Section: Device Fabrication and Thz Detection Resultsmentioning

confidence: 76%