Effect of Ge-addition on physical and optical properties of chalcogenide Pb10Se90-xGex bulk glasses and thin films

Sharma, Ishu; Hassanien, Ahmed Saeed

doi:10.1016/j.jnoncrysol.2020.120326

Cited by 71 publications

(19 citation statements)

References 45 publications

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“…The annealing condition increased the number of defect gap states because of the presence of homopolar and heteropolar bonds that leads to an increase in nonlinearity . The increased nonlinear susceptibility of the material also indicated its application in various compact and low-power devices, mostly used for telecommunication purposes. , Similarly, various chalcogenide thin films also possess n 2 values of ∼10 –11 . Pb 10 Se 90– x Ge x thin films exhibit values of 5.981 × 10 –11 to 30.48 × 10 –11 esu, which are lower than the value obtained in the work presented here.…”

Section: Resultsmentioning

confidence: 93%

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Das¹,

Senapati²,

Alagarasan

et al. 2022

ACS Appl. Opt. Mater.

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This work focuses on the structural, optical, and morphological modifications in As 20 Ag 10 Te 10 Se 60 quaternary thin films that are ∼800 nm thick upon thermal annealing at different temperatures. The structure is analyzed by Xray diffraction that reveals the phase transformation (amorphous to crystalline) due to annealing. This material's phase transition enables it to be used in memory device applications. The increase in particle size is confirmed by field emission scanning electron microscopy of the surface. The increase in particle size signifies the agglomeration occurs at higher annealing temperatures. The optical transmittance shows a red shift toward a lower photon energy as recorded by the ultraviolet−visible spectrometer. The optical bandgap of the films decreases (1.84 to 1.72 eV), whereas the refractive index increases as calculated from the Swanepoel method. The decrease in the bandgap is attributed to the increases in the localized states. The amorphous to crystalline transition results in a significant increase in the third-order nonlinear susceptibility (from 4.524 × 10 −11 to 14.146 × 10 −11 esu). The nonlinear refractive index is found to increase from 5.385 × 10 −10 to 14.786 × 10 −10 esu upon annealing. The static and high-frequency dielectric constant increases with the increase in oscillator and dispersion energy. The observed changes are explained on the basis of phase transformation and the density of defect states. The enhanced value of the nonlinear refractive index with a reduced optical electronegativity and carrier concentration with annealing is useful for nonlinear optical devices.

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Section: Resultsmentioning

confidence: 93%

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Das¹,

Senapati²,

Alagarasan

et al. 2022

ACS Appl. Opt. Mater.

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“…54 The increase in the refractive index can be attributed to an increase in density by substituting sulphur with a larger amount of selenium. 55 From Table 2, it can be observed that the dielectric constant of the lattice increased with the increase in selenium doping. Furthermore, optical electronegativity has a crucial role in determining various physicochemical constants of the material.…”

Section: Results Analysis and Discussionmentioning

confidence: 97%

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Parida¹,

Sahoo²,

Alagarasan

et al. 2022

Mater. Adv.

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“…The optical density (OD) is associated with the absorption of light, which indicates the absorbing power of the material toward electromagnetic radiation 69 . Optical density was calculated by using the following relation 70 :

\begin{equation}\;{\rm{OD}} = \alpha \times t\end{equation}

where “‘ t ” represents the thickness of the sample.…”

Section: Resultsmentioning

confidence: 99%

“…The optical density (OD) is associated with the absorption of light, which indicates the absorbing power of the material toward electromagnetic radiation. 69 Optical density was calculated by using the following relation 70 :…”

Section: Optical Density Optical Conductivity and Electrical Conducti...mentioning

confidence: 99%

Effect of Sb addition on Sb_xSn_1‐_xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications

et al. 2022

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The current paper reports the changes in the structural and optical properties of antimony-doped tin sulfide ternary (Sb x Sn 1-x S) (x = 0, 0.05, 0.1, 0.15, 0.2) thin films synthesized by the thermal evaporation technique on a glass substrate. Structural characterization techniques such as X-ray diffraction and Raman spectroscopy of the prepared sample revealed that the thin films are crystalline in nature. The nanoflake-like structure was found from the surface morphological analysis performed by field emission scanning electron microscopy. The concentration of the compositional elements was confirmed from the energy dispersive X-ray analysis. The linear and nonlinear optical parameters were calculated by using the transmission data obtained from UV-vis spectroscopy in the range of 800-1100 nm. The optical measurements showed an increase in transmittance and shifting of the absorption edge. The optical bandgap increased (1.239-1.378 eV) and the refractive index decreased with the increase of Sb concentration, satisfying the Moss rule. The nonlinear susceptibility and the nonlinear refractive index (n 2 ) decreased with Sb content. The changes in both linear and nonlinear parameters by varying the antimony doping concentration could be helpful for controlling the optical properties of Sb x Sn 1-x S thin films and could be a suitable candidate for many photonics and optoelectronic applications.

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Effect of Ge-addition on physical and optical properties of chalcogenide Pb10Se90-xGex bulk glasses and thin films

Cited by 71 publications

References 45 publications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Effect of Sb addition on Sb_xSn_1‐_xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications

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Effect of Ge-addition on physical and optical properties of chalcogenide Pb10Se90-xGex bulk glasses and thin films

Cited by 71 publications

References 45 publications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS1−xSex) for optoelectronic applications

Effect of Sb addition on SbxSn1‐xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications

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Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Effect of Sb addition on Sb_xSn_1‐_xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications