Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates

Abstract

High-quality GaN films on nanoscale patterned sapphire substrates (NPSSs) are required for micro-light-emitting diode (micro-LED) display. In this study, two types of nucleation layers (NLs), including in-situ low-temperature grown GaN...