Effect of grain orientations of Cu seed layers on the growth of &lt;111&gt;-oriented nanotwinned Cu

Liu, Chien Min; Lin, Han Wen; Lu, Chia Ling; Chen, Chih

doi:10.1038/srep06123

Cited by 26 publications

(17 citation statements)

References 21 publications

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“…It is noted that in the current MD simulated model, most twin lamellae form not directly at the substrate, but several atoms far from the substrate. In fact, it is verified both in our work and in Chen et al .’s work 5 , 20 that the high density of TBs forms a distance from the film/substrate interface rather than adjacent to the interface. In thick electrodeposited Cu films, an obvious transition layer is found both in the current growth model (refer to Supplementary Figure S4 ) and the columnar grain growth model with TBs parallel with the films.…”

Section: Resultsmentioning

confidence: 99%

In situ observation of nanotwins formation through twin terrace growth in pulse electrodeposited Cu films

Cheng

et al. 2017

Sci Rep

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Nanotwinned copper (nt-Cu) shows a broad application prospects as interconnection materials in integrated circuit industry, since it combines the excellent mechanical and electrical properties. However, the formation and growth behavior of twin lamellae in pulse electrodeposited copper films are not fully understood. In this work, a series of electroplated copper films are prepared by verifying the electroplating parameters and the microstructures are analyzed using scanning electron microscope (SEM) and transmission electron microscope (TEM). The surface morphology indicates strong evidence of stacked twin terraces and layers, suggesting that nanotwins grow up layer by layer. Combined with in situ characterization by SEM and molecular dynamics (MD) simulation, it is proved that the terraces originate from the triple junction of grain boundaries and grow up by extending along the lateral (111) crystal plane. A twin terrace-growing model for nt-Cu is then deduced, which distinguishes from deformation twins or annealed twins. This growth model would be prospective to help obtain high quality of nt-Cu in industry.

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Section: Resultsmentioning

confidence: 99%

In situ observation of nanotwins formation through twin terrace growth in pulse electrodeposited Cu films

Cheng

et al. 2017

Sci Rep

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“…To fabricate the sputtered 97% (111)-oriented Cu film, a 100 nm-thick Ti adhesion layer and a 200 nm-thick Cu film were sequentially sputtered on an 8-in Si wafer using an Oerlikon Cluster Line 300. The Cu film has a very strong (111)-preferred orientation 22 . The results from electron backscattered diffraction (EBSD) indicate that 97% of the film surface was in the (111) orientation.…”

Section: Methodsmentioning

confidence: 99%

Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

Liu

Lin

Huang

et al. 2015

Sci Rep

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160

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Direct Cu-to-Cu bonding was achieved at temperatures of 150–250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10–60 min at 10−3 torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90%, was fabricated using the oriented nano-twin Cu. The bonded interface between two (111) surfaces forms a twist-type grain boundary. If the grain boundary has a low angle, it has a hexagonal network of screw dislocations. Such network image was obtained by plan-view transmission electron microscopy. A simple kinetic model of surface creep is presented; and the calculated and measured time of bonding is in reasonable agreement.

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“…As a conductive medium for the subsequent micro-electroforming, a seed layer consisted of Cu or Au as well as an adhesive layer of Cr or Ti, was usually deposited on the entire surface of the PI film [14,15]. Based on our experience, the removal of unwanted seed layer using corrosive solution could cause potential damage to the PI film and jeopardize the adhesion between PI film and the seed layer.…”

Section: Device Fabricationmentioning

confidence: 99%

Fabrication of a multilayered optical device based on submicron polyimide film

Chen¹,

Chen²

2016

Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology

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A submicron polyimide film (<1μm) with high thickness uniformity was prepared via spin-coating method. Aluminum foil and patterned nickel mesh were sequentially fabricated on the surface of polyimide film using magnetron sputtering and micro-electroforming. Transmittance of the device in UV-vis waveband indicated that the thickness of aluminum plays a dominant important role rather than the other layers. The results of atomic oxygen erosion experiment of the multilayered structure, investigated by ground-based simulation facility, suggests that the Al foil was capable of protecting PI film from atomic oxygen erosion.

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Effect of grain orientations of Cu seed layers on the growth of <111>-oriented nanotwinned Cu

Cited by 26 publications

References 21 publications

In situ observation of nanotwins formation through twin terrace growth in pulse electrodeposited Cu films

In situ observation of nanotwins formation through twin terrace growth in pulse electrodeposited Cu films

Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

Fabrication of a multilayered optical device based on submicron polyimide film

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