Effect of grain size on thermoelectric properties of n-type nanocrystalline bismuth-telluride based thin films

Takashiri, Masayuki; Miyazaki, Kôji; Tanaka, Saburo; Kurosaki, Jun Ichiro; Nagai, Daisuke; Tsukamoto, Hiroshi

doi:10.1063/1.2990774

Cited by 138 publications

(74 citation statements)

References 24 publications

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“…Finally, the maximum power factor reached 3.0 µW/(cm K 2 ) at the Te content of 85 at%, corresponding to a p-type semiconductor, and 1.3 µW/(cm K 2 ) at the Te content of 60 at%, corresponding to an n-type semiconductor. The thermoelectric performances in this study were comparable to the reported values of electrodeposited Bi-Te thin films [27] but they are not sufficient compared to the performance of Bi-Te thin films prepared by other deposition methods [28].…”

Section: (B) and (C)supporting

confidence: 72%

Effect of composition on the properties of bismuth telluride thin films produced by galvanostatic electrodeposition

Matsuoka

Okuhata

Hatsuta

et al. 2015

Trans. Mat. Res. Soc. Japan

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Bismuth telluride thin films were prepared on nickel plate by galvanostatic electrodeposition from hydrochloric acid-based electrolyte. It was found that the structural and thermoelectric properties of the thin films were strongly dependent on the Te content in the electrolyte. All thin films with various Te contents exhibited peaks in their X-ray diffraction patterns corresponding to the reflections of the rhombohedral phase of Bi2Te3. The surface morphology of the thin films with nearly stoichiometric composition was formed by dendritic crystallites, and that of the Te-rich thin film revealed a granular structure. The electrical conductivity of these thin films seemed to be influenced by both the Te content and the morphology. The Seebeck coefficient of the thin films exhibited both negative and positive values in dependence of the quantity of Te in the electrolyte. This behavior is advantageous because only by changing the Te content of the electrolyte, the material composition can be manipulated to yield either p-type or n-type semiconductors suitable for thermoelectric devices.

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Section: (B) and (C)supporting

confidence: 72%

Effect of composition on the properties of bismuth telluride thin films produced by galvanostatic electrodeposition

Matsuoka

Okuhata

Hatsuta

et al. 2015

Trans. Mat. Res. Soc. Japan

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“…The inherent phonon scattering due to the nanostructure of thin fi lms can be exploited to enhance TE properties. [7][8][9][10][11] Extremely high TE fi gures of merit have been reported for superlattices, [ 12 , 13 ] yet their complicated and expensive production makes large-scale, widespread commercialization problematic.…”

Section: Doi: 101002/adma201104947mentioning

confidence: 99%

Low‐Cost High‐Performance Zinc Antimonide Thin Films for Thermoelectric Applications

et al. 2012

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Zinc antimonide thin films with high thermoelectric performance are produced by a simple sputtering method. The phase-pure Zn(4)Sb(3) and ZnSb thin films fulfill the key requirements for commercial TE power generation: cheap elements, cheap fabrication method, high performance and thermal stability. In addition, two completely new meta-stable crystalline phases of zinc antimonide have been discovered.

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“…Here, it is noted that the transport properties are in uenced by the crystallite size of the lm. [32][33][34] However, we did not consider the effect of the crystallite size because the thin lms in this study had very similar crystallite sizes. Finally, we also assumed that the degree of anisotropy was not dependent on the crystallite size.…”

Section: Anisotropic Analysis Of Bi 2 Te 3 Thin Lmsmentioning

confidence: 99%

Anisotropic Analysis of Nanocrystalline Bismuth Telluride Thin Films Treated by Homogeneous Electron Beam Irradiation

et al. 2017

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The in-plane and cross-plane transport properties of nanocrystalline bismuth telluride (Bi 2 Te 3 ) thin lms were evaluated to analyze their anisotropic behavior. Bi 2 Te 3 thin lms were prepared via radio frequency (RF) magnetron sputtering, followed by a subsequent treatment of thermal annealing and homogeneous electron beam (EB) irradiation at various EB doses. The crystallographic properties of the thin lms were determined by X-ray diffraction (XRD) analysis. It was determined that the crystal orientation (Lotgering factor; F value) of Bi 2 Te 3 thin lms can be controlled by homogeneous EB irradiation treatments, without resulting in crystal growth. The electrical conductivity and Seebeck coefcient were measured in the in-plane direction of the lms, and the thermal conductivity was measured in the cross-plane direction using the 3ω method. The anisotropic analysis was performed by combining the F value of the thin lms with a simple model based on the transport properties of the basal and lateral planes of single-and poly-crystal Bi 2 Te 3 . The electrical and thermal conductivities of the in-plane and cross-plane directions of the EB-irradiated thin lms clearly differed; however, there was no signi cant difference between the Seebeck coef cient values of the two planes. Finally, we determined that the gure of merit, ZT, was enhanced by the homogeneous EB irradiation treatment, and the inplane ZT value was 25% greater than that of the cross-plane direction.

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Effect of grain size on thermoelectric properties of n-type nanocrystalline bismuth-telluride based thin films

Cited by 138 publications

References 24 publications

Effect of composition on the properties of bismuth telluride thin films produced by galvanostatic electrodeposition

Effect of composition on the properties of bismuth telluride thin films produced by galvanostatic electrodeposition

Low‐Cost High‐Performance Zinc Antimonide Thin Films for Thermoelectric Applications

Anisotropic Analysis of Nanocrystalline Bismuth Telluride Thin Films Treated by Homogeneous Electron Beam Irradiation

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