2020
DOI: 10.1007/s10854-020-03223-y
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Effect of growth and electrical properties of TiOx films on microbolometer design

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Cited by 10 publications
(5 citation statements)
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“…As verified by STEM and atomic force microscopy (AFM) (fig. S1A), the WO X oxidized from monolayer WSe 2 showed a uniform thickness of 1.5 to 2 nm despite slight variation resulted from the process-induced deformation or nonstoichiometric/inhomogeneous oxidation (26). Even after oxidation, WO X maintains an atomically flat surface with a roughness of 60 pm, comparable to the smoothness of WSe 2 (fig.…”
Section: Monolithic Bandgap Engineering Of Wse 2 For Mqwsmentioning
confidence: 91%
“…As verified by STEM and atomic force microscopy (AFM) (fig. S1A), the WO X oxidized from monolayer WSe 2 showed a uniform thickness of 1.5 to 2 nm despite slight variation resulted from the process-induced deformation or nonstoichiometric/inhomogeneous oxidation (26). Even after oxidation, WO X maintains an atomically flat surface with a roughness of 60 pm, comparable to the smoothness of WSe 2 (fig.…”
Section: Monolithic Bandgap Engineering Of Wse 2 For Mqwsmentioning
confidence: 91%
“…The structural compositions were analyzed by Raman, EDS, and XRD, as respectively shown in Figure a–c. The featured amorphous TiO x Raman peaks in the range of 202–244 cm –1 for all tested samples are shown in Figure a and Figure S5. Oxygen contents (Figure b) measured from EDS spectroscopy further support the surface oxidation, and furthermore, they indicate that oxidation rates are closely correlated with the laser power and scan velocity.…”
Section: Results and Discussionmentioning
confidence: 97%
“…For instance, changes in oxygen partial pressure impact the substance's content, and high-temperature reactions often result in an ordered arrangement for the film. 107,108 TiO 2−x has a large bandgap (3.2 and 3.0 eV for anatase and rutile, respectively). When the temperature rises above 300 K, Mardare et al 109 research's on the temperature dependency of electrical conductivity signified that a straightforward thermal activation conduction process might understand the reported conductivity of the TiO 2−x films.…”
Section: Vanadium Oxide (Vo X )mentioning
confidence: 99%
“…No sharp diffraction peak of any crystalline phase is observed, indicating all the films deposited at room temperature have amorphous structures with no preferred orientation. For instance, changes in oxygen partial pressure impact the substance’s content, and high-temperature reactions often result in an ordered arrangement for the film. , …”
Section: Materials Considerations For Wearable Bolometermentioning
confidence: 99%