Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

Blumenschein, Nicholas A.; Paskova, Tania; Muth, John F.

doi:10.1002/pssa.201900098

Cited by 17 publications

(4 citation statements)

References 32 publications

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“…Therefore, the effective illuminated area of our detector is ~0.043 cm 2 [13]. Such a three fingers electrode was employed without considering the effect of the number of pairs of interdigital electrodes on device performances [28]. As given in figure 2(a), x-ray diffraction (XRD) 2θ scan was executed to characterize the quality of the prepared ε-Ga 2 O 3 thin film, which exhibits a high quality monocrystal along (002), ( 004) and (006) directions along with high peaks [29,30], especially for the ε (004) peak even higher than the sapphire substrate (0006) peak.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of ϵ-Ga₂O₃ solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Liu

Huang

Zhang³

et al. 2020

J. Phys. D: Appl. Phys.

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Owing to the constraint of carrier transport, the dark current is relatively lower in Schottky contacted devices than that in Ohmic contacted devices, leading to a high specific detectivity in photodetectors. In this work, we prepared ϵ-Ga2O3 thin film by using metal-organic chemical vapor deposition, then constructed a three-pair interdigital ultraviolet solar-blind photodetector with Au electrodes as Schottky contacts. Seen from the results, this photodetector displays an outstanding wavelength selectivity with responsivity of 0.52 A W−1 responding to 250 nm wavelength light. In addition, it shows a photo-to-dark current ratio of 1.82 × 104/6.03 × 102 at 5 V under 40/5 μW cm−2 254 nm light illuminations, respectively, and a low dark current of 1.87 × 10−11 A. Correspondingly, the specific detectivity is 1.67 × 1013/4.45 × 1012 Jones, and the photoresponsivity is 0.198 A W−1/52.54 mA W−1. Overall, ϵ-Ga2O3 prepared here is certified to be an excellent candidate material to perform high-performance solar-blind detection.

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Section: Methodsmentioning

confidence: 99%

Fabrication of ϵ-Ga₂O₃ solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Liu

Huang

Zhang³

et al. 2020

J. Phys. D: Appl. Phys.

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“…Whereas, with the temperature of 1050 °C, the atoms acquire enough energy to move and bond with adjacent nucleation sites. However, when the temperature rises further, the epitaxy speed decreases sharply owing to the migration of the atoms being too fast to form the regular bonds of a single crystal [32] .…”

Section: Effects Of Temperature Of Lower Part Of Furnace On Filmmentioning

confidence: 99%

Investigation of β-Ga₂O₃thick films grown on c-plane sapphire via carbothermal reduction

Lü¹,

Zhang²,

Zhang³

et al. 2023

J. Semicond.

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We investigated the influence of the growth temperature, O2 flow, molar ratio between Ga2O3 powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by a carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga2O3 illustrate that β-Ga2O3 growth by the carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050 °C. The fastest growth rate of β-Ga2O3 films was produced when the O2 flow was 20 sccm. To guarantee that β-Ga2O3 films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga2O3 powder should be set at 10 : 1.

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“…It has a wide bandgap (4.9 eV), high breakdown electric fields theoretically reaching E br = 8 MV cm −1 , and a three-times higher Baliga figure of merit compared with GaN; thus, it can be widely used in DUV photodetectors (PDs), thin film transistors (TFTs), and Schottky barrier diodes (SBDs) [1,57,58]. β-Ga 2 O 3 can be grown using common deposition techniques, such as sol-gel, PLD, MOCVD, and MBE [59][60][61][62]. Moreover, as the most stable phase among the polymorphs, β-Ga 2 O 3 can be converted from the other isomers upon high-temperature sintering.…”

Section: Crystal Structure and Deposition Techniquesmentioning

confidence: 99%

Flexible gallium oxide electronics

Tang

2023

Semicond. Sci. Technol.

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Flexible Ga2O3 devices are becoming increasingly important in the world of electronic products due to their unique properties. As a semiconductor, Ga2O3 has a much higher bandgap, breakdown electric field, and dielectric constant than silicon, making it a great choice for next-generation semiconductor materials. In addition, Ga2O3 is a particularly robust material that can withstand a wide range of temperatures and pressure levels, thus is ideal for harsh environments such as space or extreme temperatures. Finally, its superior electron transport properties enable higher levels of electrical switching speed than traditional semiconducting materials. Endowing Ga2O3-based devices with good mechanical robustness and flexibility is crucial to make them suitable for use in applications such as wearable electronics, implantable electronics, and automotive electronicsHowever, as a typical ceramic material, Ga2O3 is intrinsically brittle and requires high temperatures for its crystallization. Therefore fabricating flexible Ga2O3 devices is not a straightforward task by directly utilizing the commonly used polymer substrates. In this context, in recent years people have developed several fabrication routes, which are the transfer route, in situ room-temperature amorphous route, and in situ high-temperature epitaxy route. In this review, we discuss the advantages and limitations of each technique and evaluate the opportunities for and challenges in realizing the applications of flexible Ga2O3 devices.

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Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

Cited by 17 publications

References 32 publications

Fabrication of ϵ-Ga₂O₃ solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Fabrication of ϵ-Ga₂O₃ solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Investigation of β-Ga₂O₃thick films grown on c-plane sapphire via carbothermal reduction

Flexible gallium oxide electronics

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Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

Cited by 17 publications

References 32 publications

Fabrication of ϵ-Ga2O3 solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Fabrication of ϵ-Ga2O3 solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction

Flexible gallium oxide electronics

Contact Info

Product

Resources

About

Fabrication of ϵ-Ga₂O₃ solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Fabrication of ϵ-Ga₂O₃ solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Investigation of β-Ga₂O₃thick films grown on c-plane sapphire via carbothermal reduction