Effect of Growth Temperature of GaAs/Al_0.4Ga_0.6As Lower Cladding Layer on the Photoluminescence Intensity of InAs/Sb:GaAs Quantum Dots Monolithically Grown on Ge/Si Substrate by MOCVD for Laser Application

Abstract

IntroductionSince the proposal by Arakawa and Sakaki [1], research on quantum dots (QDs) and its application to the next-generation photonics devices have been gaining increasing interest, due to their 3-D quantum confinement properties. Recently, Ge-based Si substrate has drawn considerable attention for the direct growth of III-V-on-Si [2] for silicon photonics application. QD laser grown by molecular beam epitaxy (MBE) on Ge/Si substrate has been recently demonstrated [3]. However, metal organic chemical vapor deposition (MOCVD) is preferred over MBE for industrial application and fabrication of QD laser by MOCVD is of great interest. Here, we report on the effect of growth temperature of GaAs/Al 0.4 Ga 0.6 As lower cladding layer (LCL) on the photoluminescence (PL) intensity of InAs/Sb:GaAs QDs monolithically grown on Ge/Si substrate by MOCVD.