Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite

Suandon, Siripen; Sanorpim, Sakuntam; Yoodee, Kajornyod; Onabe, Kentaro

doi:10.1016/j.tsf.2006.07.109

Cited by 33 publications

(34 citation statements)

References 17 publications

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“…1(a)). We demonstrated the laterally overgrown c-GaN with a low planar defect (SFs and twins) density present in the GaN region above the stripe windows [13]. We believed that the decrease of the stacking fault density results from their annihilation and termination within the c-GaN-stripe.…”

Section: Resultsmentioning

confidence: 87%

Structural transition control of laterally overgrown c‐GaN and h‐GaN on stripe‐patterned GaAs (001) substrates by MOVPE

Sanorpim

Takuma

Ichinose

et al. 2007

Physica Status Solidi (b)

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Growth mechanisms and material quality of the laterally overgrown cubic-phase gallium nitride (c-GaN) and hexagonal-phase gallium nitride (h-GaN) on stripe-patterned GaAs (001) substrates were investigated using transmission electron microscopy (TEM). Investigational results show that h-GaN is only laterally overgrown along the (111)B facets of the c-GaN stripes with the growth direction of (0001) , which is six orders of magnitude smaller than that in the conventionally grown h-GaN films. On the other hand, the laterally overgrown c-GaN with lower planar defect (stacking faults and twins) density presents in the region just above the stripe windows for the [1 10]-stripe pattern. In addition, a large reduction of planar defect density was found in the laterally overgrown c-GaN regions for the [100] stripe direction. Also, a model is used to describe the cubic-to-hexagonal structural transition in lateral-overgrown GaN on patterned GaAs (001) substrates for the purpose of lower dislocation and lower planar defect densities in the laterally overgrown h-GaN and c-GaN, respectively.

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Section: Resultsmentioning

confidence: 87%

Structural transition control of laterally overgrown c‐GaN and h‐GaN on stripe‐patterned GaAs (001) substrates by MOVPE

Sanorpim

Takuma

Ichinose

et al. 2007

Physica Status Solidi (b)

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“…Cross-section dark-field TEM image taken from the (-220) diffraction revealed the contrasts with the pyramid-like structure penetrating from an interface of GaN/AlGaAs which decreases toward the cGaN surface. The characteristic pyramid-shaped grains can be interpreted as an evidence of structural-phase-transition from cubic to hexagonal phase associated with a presence of planar defects along the {111} planes [8]. It is well known that a generation of such planar defects, i.e.…”

Section: Resultsmentioning

confidence: 99%

“…It is demonstrated that a 300-nm-thick Al 0.2 Ga 0. 8 As buffer layer can protect the GaAs (001) surface from thermal decomposition during the growth at 960 o C, remaining a growth of c-GaN on GaAs substrate without any voids at the interface. Two different types of defect structures having an anisotropic distribution between the [110] and [1][2][3][4][5][6][7][8][9][10] zone axes were observed.…”

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confidence: 99%

TEM investigation of anisotropic defect structure in cubic GaN/AlGaAs/GaAs(001) grown by MOVPE

Parinyataramas¹,

Sanorpim²,

Thanachayanont³

et al. 2011

Phys. Status Solidi C

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The effects of AlxGa1‐xAs buffer layer insertion on the defect structures and their distribution in cubic (c‐) GaN films on GaAs (001) substrates grown by low‐pressure metalorganic vapor phase epitaxy have been investigated by means of bright‐ and dark‐field cross‐sectional transmission electron microscopy. It is demonstrated that a 300‐nm‐thick Al0.2Ga0.8As buffer layer can protect the GaAs (001) surface from thermal decomposition during the growth at 960 °C, remaining a growth of c‐GaN on GaAs substrate without any voids at the interface. Two different types of defect structures having an anisotropic distribution between the [110] and [1‐10] zone axes were observed. For the [110] zone‐axis, the pyramid‐shaped grains, which are proposed to construct from planar defects, such as SFs and twins, were observed. On the other hand, for the [1‐10] zone‐axis, a dense cubic phase structure with less contribution of planar defects was observed. However, threading dislocations, which were produced by a coalescence of pyramid‐shaped grains in the [110] direction, were observed at the top regions of c‐GaN layer. Both types of defect structures have an anisotropic distribution within a cubic symmetry that may be due to different atomic structures on the AlGaAs surface along the [110] and [1‐10] crystallographic directions. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The tilted angles between GaAs (002) plane and cubic (002) and hexagonal (10)(11) planes in the InN layers are 0° and ±7°, respectively. This demonstrates that the hexagonal-phase presented in the c-InN layers is mainly constructed on the cubic (111) surfaces and the crystal orientation relationship between hexagonal-phase inclusion and c-InN is hexagonal (0001)//cubic (111) [12,13].…”

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confidence: 79%

“…These results agree well with those of pervious investigation reported by Schoermann et al [17] They have been reported the growth of c-InN layer with small fraction of hexagonal phase inclusions under the In-rich growth conditions. Under the certain In-rich growth condition, the generation of hexagonal phase in the c-InN layer is found to be increased as increasing growth temperature [12,17]. …”

mentioning

confidence: 96%

Metastable cubic InN layers on GaAs (001) substrates grown by MBE: Growth condition and crystal structure

Sanorpim

Jantawongrit

Kuntharin

et al. 2009

Phys. Status Solidi (c)

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Transmission electron microscopy and high resolution X‐ray diffraction were applied to characterize the crystal structure and its modification in c‐InN layers on GaAs (001) substrates grown by rf‐plasma assisted molecular beam epitaxy. The layer quality was shown to depend on growth conditions, namely In‐ and N‐rich conditions. The best quality of c‐InN layers was achieved by “stoichiometric” growth under the In‐rich condition, resulting in In‐rich layers with a small amount of hexagonal‐phase inclusion (∼8%). On the other hand, nucleation and growth of N‐rich layers are shown to result in a high density of stacking faults which drastically decreases toward the InN surface. It is argued that the presence of stacking faults contributes to the structural modification in these layers. We found that the existence of a structural modification from cubic to mixed cubic/hexagonal phase in microstructure of the N‐rich layers exhibit higher hexagonal‐phase incorporation than that of the In‐rich layers. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite

Cited by 33 publications

References 17 publications

Structural transition control of laterally overgrown c‐GaN and h‐GaN on stripe‐patterned GaAs (001) substrates by MOVPE

Structural transition control of laterally overgrown c‐GaN and h‐GaN on stripe‐patterned GaAs (001) substrates by MOVPE

TEM investigation of anisotropic defect structure in cubic GaN/AlGaAs/GaAs(001) grown by MOVPE

Metastable cubic InN layers on GaAs (001) substrates grown by MBE: Growth condition and crystal structure

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