Effects of the Al concentration and the growth variables on the optical and electrical properties of UV-range Zn 0.88-x Mg 0.12 Al x O TCO films were studied in detail. As the Al content increased from 0% to 5%, the band gap increased from 3.6 to 3.8 eV, with the optical transmittance maintained at ∼90% within the 370-800 nm wavelength range. The resistivity significantly decreased by doping the film with Al, to 2-3 × 10 −3 cm, but was not critically affected by the addition of a larger amount of Al. The resistivity drastically increased with the addition of O 2 gas into the Ar sputter plasma and/or by increasing growth temperature. It was proposed that the density of the point defects, as well as the presence of the dopant impurity, plays a key role in determining the carrier concentration. Minimum resistivity, ∼3 × 10 −3 cm, was obtained when grown at 10 mTorr pressure, 125 W RF power, Ar ambient and room temperature.