2010
DOI: 10.1134/s1063782610010045
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Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films

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Cited by 13 publications
(5 citation statements)
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“…The GAG-0 sample without any silver interlayer showed a high sheet resistance R S of 2500 Ω/sq and electrical resistivity ρ in the order of 10 −2 Ω•cm due to the low preparation temperature. The optical transmittance of GAG-0 is 88% in the visible range of wavelengths (400-700 nm), as shown in Figure 3a, which is consistent with early studies [23,26]. After covering this GZO film with the 10-nm thick Ag layer (GA sample), the resistivity decreases to 2.3 × 10 −5 Ω•cm.…”
Section: Optical and Electrical Studiessupporting
confidence: 87%
See 1 more Smart Citation
“…The GAG-0 sample without any silver interlayer showed a high sheet resistance R S of 2500 Ω/sq and electrical resistivity ρ in the order of 10 −2 Ω•cm due to the low preparation temperature. The optical transmittance of GAG-0 is 88% in the visible range of wavelengths (400-700 nm), as shown in Figure 3a, which is consistent with early studies [23,26]. After covering this GZO film with the 10-nm thick Ag layer (GA sample), the resistivity decreases to 2.3 × 10 −5 Ω•cm.…”
Section: Optical and Electrical Studiessupporting
confidence: 87%
“…In order to keep a low resistance and conversely maintain high optical transmittance, oxide-metal-oxide multilayered structures have recently received renewed interest as a highly promising route towards the production of flexible large area OLEDs and solar cells [3,[18][19][20]. In this case, Ag is the optimal metal because of its low resistivity (approximately 1.6 × 10 −6 Ω•cm) and relatively low cost [21], whereas Ga-doped ZnO (GZO) is the optimal oxide due to its abundance, low cost, superior optical features, and rather high stability [22,23].…”
Section: Introductionmentioning
confidence: 99%
“…As a result, the sample ZnO-1 with a larger relative interface volume (or smaller size of crystalline size) manifests higher conductivity in comparison to sample ZnO-2. The increase of the imaginary part of dielectric permittivity for sample ZnO-1 is also caused by lowering of the potential barriers for free carriers on the grain boundaries due to the intensification of oxygen thermal desorption from the grain surface during the film growth in vacuum [22].…”
Section: Resultsmentioning
confidence: 99%
“…It has been reported that the properties of ZnO and ZnMgO films grown with a variety of deposition methods are strongly affected by growth conditions [9][10][11]. Growth parameters affected the microstructures and chemistry of various defects [9][10][11], resulting in different optical, electrical and/or structural properties.…”
Section: Introductionmentioning
confidence: 99%
“…It has been reported that the properties of ZnO and ZnMgO films grown with a variety of deposition methods are strongly affected by growth conditions [9][10][11]. Growth parameters affected the microstructures and chemistry of various defects [9][10][11], resulting in different optical, electrical and/or structural properties. Thus, a better understanding of the correlations between growth conditions and film properties is essential to obtain high-quality ZnMgAlO films with proper characteristics.…”
Section: Introductionmentioning
confidence: 99%