Effect of H-implantation in the local elastic properties of silicon crystals

Strain profiles in ion implanted ceramic polycrystals: An approach based on reciprocal-space crystal selection

“…Firstly this suggests that the swelling is not caused in this case by the presence of implanted hexogen ion (contrary to Si implanted with H + ions 26,27 for instance), this maximum of the He concentration profile being shifted by about 0.05 µm deeper in the UO 2 implanted matrix with respect to the free swelling profile. Secondly the similarity between the damage profile and the free swelling profile (namely for depth in the [0.2; 0.4 µm] range) suggests that the latter mainly originates from ballistic effects, since only this energy loss mechanism is taken into account in the damage profile calculation.…”

Effects of non-amorphizing hydrogen ion implantation on anisotropy in micro cutting of silicon

“…The peak is asymmetrical for the 'HSi' sample, and on the lower (2) side it is stretched and numerous fringes are observed. The small peaks are commonly observed in silicon implanted with hydrogen for a wide range of implantation doses (Reboh et al, 2013). The presence of the small peaks indicates the existence of strain in the silicon lattice, and the strain is expected to be confined around the projected range of implantation (Reboh et al, 2013).…”

“…The small peaks are commonly observed in silicon implanted with hydrogen for a wide range of implantation doses (Reboh et al, 2013). The presence of the small peaks indicates the existence of strain in the silicon lattice, and the strain is expected to be confined around the projected range of implantation (Reboh et al, 2013). Irregular amplitude and fringes in the HRXRD of 'HSi' in comparison to that with a single energy implantation with the same dose published by other groups (Sousbie et al, 2006), implies that the triple implantation introduces a complex strain behavior.…”

“…A detailed strain analysis is beyond the main scope of this investigation, but the important observation that hydrogen implantation introduces a vertical strain remains. It was reported that hydrogen doses above 2 × 10 16 cm −2 could reduce the shear modulus of silicon (Reboh et al, 2013), so this modification of mechanical property might also occur in the 'HSi' sample as well.…”

(Invited) Defect Evolution during Silicon Smartcut™

“…Contrary to normal (vertical) strain, stress as a function of dose showed an expected behavior: linear dependence with dose at low dose, followed by a reduction of the stress vs dose slope at higher doses, as expected from a saturation effect. The results oriented the explanation towards an examination of the elastic coefficient of the (5). Rationalizing stress to strain, the evolution of some elastic coefficients (shear modulus, Poisson ratio, compressibility) can be derived.…”