Effect of H₂S Annealing on Ag-Rich Ag–In–S Thin Films Prepared by Vacuum Evaporation

Abstract

We investigated the effect of H2S annealing on Ag–In–S thin films prepared by vacuum evaporation. In thin films annealed above 350 °C, diffraction peaks except chalcopyrite AgInS2 phase were not observed for a starting material ratio of 1.0 but observed for that of 1.2. Thin films annealed at 400 °C with a starting material ratio of 1.5 contained several phases. We found that the Ag/In ratios of the films could be controlled by changing the starting material ratio. Grains of films with composition ratios of 1.0 and 1.2 were nonuniform, whereas those with a composition ratio of 1.5 were uniform.