IEEE Electron Device Lett.
 2012
DOI: 10.1109/led.2012.2212233
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Effect of $\hbox{B}_{2}\hbox{H}_{6}$ Plasma Doping on the Shallow Trench Isolation in CMOS Image Sensor Device

Sung Gyu Pyo
1
,
Ji Hwan Park
2
,
Taek-Seung Yang
3
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