Effect of heater design on the melt crystal interface

Sanmugavel, S.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

doi:10.1063/1.4980705

Cited by 5 publications

(3 citation statements)

References 3 publications

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“…The uniform thermal stress is maintained in the grown mc-Si ingot for the modified HEB. [21,22] The thermal stress may be reduced due to the thermal gradient influenced by the modified HEB.…”

Section: Von Mises Stressmentioning

confidence: 99%

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Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Sekar,

Thamodharan,

Manikkam

et al. 2023

Cryst. Res. Technol.

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The present work is based on the numerical investigation of thermal stress and the dislocation density of the directional solidification (DS) grown multi‐crystalline silicon (mc‐Si) ingot. The heat exchanger block (HEB) plays the main role in the growth process, which decides the thermal stress and melt‐crystal interface of the mc‐Si ingot. The conventional furnace is modified to increase the quality of the mc‐Si ingot. The modification on the conventional furnace is done in the insulation block replaced by 1/3rd of the HEB. The HEB enhances the huge amount of heat extraction from the bottom of the crucible. The von Mises stress, dislocation density, and thermal gradient are analyzed. The thermal stress is reduced by the low thermal gradient influenced by the modified HEB. The modified HEB reduces the von Mises stress and dislocation density. The modified furnace system overcomes the conventional case ingot. The result shows that the modified furnace grown mc‐Si ingot improves the efficiency of the solar cell.

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Section: Von Mises Stressmentioning

confidence: 99%

“…The annealing process affects the dislocation density of the grown mc-Si ingot. [22,25] In Figure 5, the conventional ingot has a minimum dislocation density compared to the modified furnace. But, the 100% grown ingot has a maximum dislocation density due to heterogeneous thermal stress.…”

Section: Dislocation Densitymentioning

confidence: 99%

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Sekar,

Thamodharan,

Manikkam

et al. 2023

Cryst. Res. Technol.

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“…The composition of Si 3 N 4 and silica crucible impacts the chemical reaction in the DS process. [46,[61][62][63] The higher oxygen concentration is obtained from the roughed inner side of the silica crucible. There are different silica crucibles and they have specific barriers, then implemented to grow the mc-Si ingot.…”

Section: Ds Furnacementioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation

Sugunraj

Aravindan

Srinivasan

et al. 2022

Silicon

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Effect of heater design on the melt crystal interface

Cited by 5 publications

References 3 publications

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation

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