Effect of heavy-ion on frequency selectivity of semiconducting polymer/electrolyte heterojunction

Dong, Wenxiang; Zeng, Fanzi; Lu, Shaoping; Li, X. J.; Chang, Chiating; Liu, A.; Pan, Feng; Guo, Dong

doi:10.1039/c5ra19938g

Cited by 5 publications

(15 citation statements)

References 44 publications

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“…The cell was obviously frequency selective, i.e., depression at LFS (10–90 Hz, W <100%) and potentiation at HFS (90–142 Hz, W > 100%), with a threshold at around 90 Hz. This threshold θ 0 is quite a bit higher than the previous value, which is consistent with the observation of a movable threshold . This result confirmed that prior stimulation indeed influenced the system's state and the post synaptic response.…”

Section: Resultssupporting

confidence: 89%

“…The results in Figure are quite smaller than those in our previous work . It is thought that the Nd 3+ ions with quite larger size, mass, and valence owed much slower ionic mobility than the Li + ions . The use of ions with faster ionic mobility could enhance lager weight modification.…”

Section: Resultsmentioning

confidence: 55%

“…It is easily thought that the type of ion would influence the frequency selectivity so that the Li + ions were replaced simply by Nd 3+ ions with quite larger size, mass and valence. The latter then resulted in variation of the absolute values of synaptic weight and the threshold frequency of transition from depression to potentiation . Besides, we have demonstrated the ionic kinetic origin of the simple potentiation microscopically, and also suggested that the ionic migration during the period of an input pulse might contribute to the bidirectional signal transferring …”

Section: Introductionmentioning

confidence: 66%

“…Pt/MEH‐PPV/PEO‐Nd 3+ /Pt artificial neural cell [structure shown as Fig. (a)] and 0.3 V triangular pulses (with a rate of 100 V/s) were adopted as the experimental subject and signal inputs, respectively . The excitatory postsynaptic current (EPSC) or inhibitory postsynaptic current (IPSC) was measured and used to calculate weight modifications at or after stimulations described in detail previously .…”

Section: Resultsmentioning

confidence: 99%

“…Pt/poly(3‐hexylthiophene‐2,5‐diyl) (P3HT)/polyethylene oxide (PEO) + Li + /Pt system was studied firstly, and found to respond in depression at low frequency stimulation (LFS) but in potentiation at high frequency stimulation (HFS), i.e., a conventional frequency selectivity observed in neuroscience . Subsequently, frequency selectivity with long‐term memory (LTM) has been achieved in both the poly [2‐methoxy‐5‐(2‐ethylhexyloxy)−1,4‐phenylenevinylene] (MEH‐PPV)/polyethylene oxide(PEO)‐Li + cell, which displayed spike‐rate dependent plasticity (SRDP) learning protocol widely studied in neuroscience . It is easily thought that the type of ion would influence the frequency selectivity so that the Li + ions were replaced simply by Nd 3+ ions with quite larger size, mass and valence.…”

Section: Introductionmentioning

confidence: 99%

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Sliding threshold of spike‐rate dependent plasticity of a semiconducting polymer/electrolyte cell

Dong

Zeng

et al. 2016

J Polym Sci B Polym Phys

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Spike‐rate dependent plasticity, one of the conventional learning protocols in neuroscience, has been achieved in semiconducting polymer/electrolyte cells. The frequency threshold θm of spike‐rate dependent plasticity is sliding in requirement of stability. In this work, various prior signal inputs are applied to poly[2‐methoxy‐5‐(2‐ethylhexyloxy)−1,4‐phenylenevinylene]/polyethylene oxide ‐Nd3+ cells to explore their effects on θm.The study find that a prior inhibitory input, i.e., a weak stimulation, moves θm in the low frequency direction, while a prior excitatory input, i.e., an intensive stimulation, moves θm in the high frequency direction. Our results demonstrate the adaptivity of ionic kinetics in macromolecules systems for signal handling and learning. We suggest that a sliding threshold is due to the variable active ionic domains depending on stimulation strength and history. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016, 54, 2412–2417

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 55%

Section: Introductionmentioning

confidence: 66%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Sliding threshold of spike‐rate dependent plasticity of a semiconducting polymer/electrolyte cell

Dong

Zeng

et al. 2016

J Polym Sci B Polym Phys

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Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Wang

Nagai

et al. 2017

Adv Elect Materials

187

124

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Memristors have been intensively studied in recent years as potential building blocks for the construction of versatile neuromorphic architectures. The prevalent developments focus on nanoionic devices due to their ease of reversible regulation, non-volatility, scalability down to the atomic level, low-energy consumption, nanosecond response times, sufficient yield and reliability, as well as their homologous regulatory mechanisms with biological synapses. However, despite their desirable structures and excellent properties, the previously reported properties of nanoionic devices are rather diverse and dissatisfactory for the delivery of reliable analog properties, which is the precondition for the imitation of brain-like functions. Here, the general requirements of neuromorphic engineering in terms of device structure, characterization parameters, synaptic functions and device engineering are introduced. A critical overview of the proposed nanoionic mechanisms for memristive switching is given, focusing particularly on providing fundamental insights into the strategies for regulating the adaptive memristive characteristics of devices that resemble the behaviors of biological synapses, which is an element of neural networks. In addition, the research progress in active materials (e.g., oxides, polymers, small molecules, bio-macromolecules and dopants), especially regarding the correlation among materials, is elaborated and a rational approach to provide insight into new design strategies is considered, and how to understand the memristor mechanisms and further achieve excellent memristive devices is discussed. Finally, the current challenges and several possible future research directions in this area are discussed.

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Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

Zeng

Chang

2017

J. Phys. Chem. C

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In this study, we established the energy alignment of the Ca(CF3SO3)2-doped poly(ethylene oxide)/poly(3-hexylthiophene-2,5-diyl), i.e., CaTf 2-PEO/P3HT, heterojunction. The concentration polarization of ions could dynamically adjust the energy level of the PEO complex, similar to light-emitting electrochemical cells (LECs). When bias is loaded in the orientation from CaTf 2-PEO-PEO to P3HT, the charge diffusions appears and the internal electric field (E in) is generated. Simultaneously, the accumulation of the ions also induces the interface stress which could be released partially after some ions are doped into the P3HT layer. The interface polarization and doping are found to be modulated by the external field under various loading rates. These two effects interact together thereby determining the size of E in and resulting in the negative differential resistance (NDR) phenomenon. The NDR peak increases with the sweeping times under conditions of slow loading rates, while it decreases under conditions of extremely high loading rates. The responses of the system and the related weight modifications of the NDR peaks are tested using a train of triangular pulses with fixed amplitude and varied loading rates. The weight obtained by calculating the 40th response is invariably positive for low loading rates, while it potentiates under low frequency stimulations but depresses under high frequency stimulations, i.e., frequency selectivity, for the conditions of very high loading rates. Our results reveal that the organic electrolyte/semiconductor heterojunction could be a simple system for analyzing and computing complicated signals in high resolutions.

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Effect of heavy-ion on frequency selectivity of semiconducting polymer/electrolyte heterojunction

Abstract: Long-term bidirectional frequency selectivity has been achieved in MEH-PPV/PEO–Nd3+cells, which suggests spike-rate-dependent plasticity learning protocol. It depends on pulse shape due to variation of ionic type.

Cited by 5 publications

References 44 publications

Sliding threshold of spike‐rate dependent plasticity of a semiconducting polymer/electrolyte cell

Sliding threshold of spike‐rate dependent plasticity of a semiconducting polymer/electrolyte cell

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

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