Effect of hetero‐interface on weak localization in InSb thin film layers

Abstract

PACS 73.40. Kp, 73.50.Jt Magnetoresistance (MR) effects caused by the quantum interference have been investigated in the InSb thin films grown on GaAs(100) substrates by MBE. The positive MR arising from the weak antilocalization (WAL) found in the accumulation layer at the InSb/GaAs interface for a 0.1 µm thick undoped film has been explained by taking account of the spin-Zeeman effect on spin-orbit interaction (SOI) caused by the asymmetric potential at the hetero interface (Rashba term) with SO scattering rate τ so -1 ~ 1.7 × 10 12 s -1 from the fits of MR. In Sn-doped films, the negative MR found in extremely weak magnetic fields crossovers to the positive MR with decreasing the film thickness from d = 1 µm to 0.1 µm. These results have been analyzed using a two-layer model for the films; the SO scattering rate in the intrinsic InSb film due to the bulk inversion asymmetry (Dresselhaus term) has been found to be as small as τ so -1 < 2 × 10 9 s -1 and when the interface is approached in the film the WL crossovers to the WAL with the increase of SOI in the layers caused by the increased influence of the Rashba electric field.

Quantization in magnetoresistance of strained InSb whiskers

“…Compressively-strained bulk InSb demonstrated the highest hole mobility close to 1000 cm 2 /(V•s) at room temperature [7]. Negative magnetoresistance (NMR) corresponding to different mechanisms of charge carrier scattering was found in such material as InSb at weak magnetic fields and lowtemperature range [10][11][12][13][14][15][16][17][18][19]. NMR phenomena with strong spin-orbital coupling gaps were revealed in topological semimetals [10].…”

“…NMR phenomena with strong spin-orbital coupling gaps were revealed in topological semimetals [10]. The NMR with various its interpretations was revealed in InSb structures on GaAs substrates [11,12]. NMR effect was studied in InSb layers with low thickness epitaxially grown on GaAs as a result of weak localization (WL) of charge carriers on defects near InSb/GaAs interface.…”

“…Negative component of magnetoresistance arises due to scattering of the conduction electrons from localized impurity magnetic moments [11]. The authors [12] studied the NMR in the InSb film with a thickness of 0.1-1 μm in the extremely weak magnetic field and the spin-orbital scattering has been analyzed due to the bulk inversion asymmetry. And the NMR crossovers to the positive MR that corresponds to crossover from weak localization (WL) to the weak anti-localization (WAL) according to the increasing of spin-orbital interaction in Sn-doped InSb films due to increasing of the Rashba electric field influence [12].…”

“…The authors [12] studied the NMR in the InSb film with a thickness of 0.1-1 μm in the extremely weak magnetic field and the spin-orbital scattering has been analyzed due to the bulk inversion asymmetry. And the NMR crossovers to the positive MR that corresponds to crossover from weak localization (WL) to the weak anti-localization (WAL) according to the increasing of spin-orbital interaction in Sn-doped InSb films due to increasing of the Rashba electric field influence [12]. The NMR was also found in n-type conductivity InSb at temperature 77 K in the longitudinal magnetic field up to 1.8 T and its dependences on carrier concentration and mobility were studied in work [13].…”

Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers

“…Negative magnetoresistance effects were analyzed in undeformed semiconductors based on InSb at low temperatures due to the scattering mechanisms of different charge carriers [7][8][9][10][11]. Besides, negative magnetoresistance phenomena were considered in deformed indium antimonide whiskers of n-type conductivity with different doping concentration in the range 6´10 16 -6´10 17 сm -3 [12].…”