Effect of HfO₂ Crystallinity on Device Characteristics and Reliability for ReRAM

Abstract

It has been investigated HfO2 crystallinity depending on the crystallinity of under layer electrode material and its effect on device characteristics and reliability for ReRAM. HfO2 on TiN electrode, which has a polycrystalline structure, shows the degradation of resistive switching characteristics possibly due to the local crystallization of HfO2 on the crystallized TiN. On the contrary, HfO2 on TiAlN electrode, which has an amorphous structure, shows the excellent switching and endurance characteristics owing to control the crystallization of HfO2.