2021
DOI: 10.3390/coatings11111381
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Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Abstract: We report the fabrication of bottom gate a-IGZO TFTs based on HfO2 stacked dielectrics with decent electrical characteristics and bias stability. The microscopic, electrical, and optical properties of room temperature deposited a-IGZO film with varied oxygen content were explored. In order to suppress the bulk defects in the HfO2 thin film and hence maximize the quality, surface modification of the SiNx film was investigated so as to achieve a more uniform layer. The root mean square (RMS) roughness of SiNx/Hf… Show more

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