Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

Lebedev, Alexander A.; Kozlovski, V. V.; Levinshteǐn, M. E.; Иванов, П. А.; Strel'chuk, Anatoly M.; Zubov, A. V.; Fursin, L.

doi:10.1088/1361-6641/ab0590

Cited by 9 publications

(8 citation statements)

References 27 publications

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“…In BJTs, point defects induced by high energy ion irradiation, already at low fluencies, are responsible for the reduction in collector current [ 27 ]. High-energy proton and electron irradiation of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) degrade the electrical performance of the device [ 28 , 29 ]. Some other studies in the literature report on changes in the charge collection efficiency and in the energy resolution of Schottky and/or p–n-based particle detectors induced by gamma ray, neutron, proton, and high-energy ion irradiation [ 7 , 30 , 31 ].…”

Section: Introductionmentioning

confidence: 99%

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

et al. 2021

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In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (£1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

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Section: Introductionmentioning

confidence: 99%

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

et al. 2021

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“…The studies reporting displacement damage effects of electron and proton irradiation are mostly based only on lateral structures [16][17][18], and thus they do not fully disclose the effect of displacement damage in the epitaxial layer. There is only one study available [19], which investigates the effect of proton irradiation on the vertical 1200 V SiC MOSFET. The results achieved show only a slight variation of the threshold voltage with fluency and monotone increase in the leakage at zero biased gates.…”

Section: Introductionmentioning

confidence: 99%

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Hazdra

Popelka

2019

IET Power Electronics

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A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal-oxide-semiconductor field-effect transistors. According to the authors' study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

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“…Насколько нам известно, влияние протонного облучения на свойства современных высоковольтных мощных вертикальных SiC MOSFETs (VMOSFETs) изучалось только в работе [12]. В [12] было исследовано влияние облучения протонами (15 МэВ) на крутизну, полевую подвижность носителей в канале, токи утечки и межэлектродную емкость. Показано, что мощные SiC VMOSFETs оказываются гораздо чувствительнее к облучению протонами, чем латеральные структуры.…”

Section: Introductionunclassified

“…Однако характер вновь образующихся при облучении центров и характеристики изменений зарядового состояния центров на границе окисел-канал до настоящего времени остаются неизученными. Заметим, что, как показано в работе [12], дозе = 10 14 cм −2 соответствует полная деградация прибора: сопротивление дрейфового слоя возрастает до значений ∼ 10 6 Ом за счет практически полного захвата свободных электронов на создаваемые протонным облучением акцепторные уровни Z 1/2 [22,23]. Дозе = 6 • 10 13 cм −2 соответствует заметная деградация крутизны и полевой подвижности прибора [12].…”

Section: Introductionunclassified

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Влияние протонного облучения (15 МэВ) на низкочастотный шум мощных SiC MOSFETs

Лебедев¹,

Levinshteǐn²,

Иванов³

et al. 2019

Физика И Техника Полупроводников

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Low frequency noise has been studied in power4H-SiC MOSFETs after proton(15 MeV) irradiation. The noise was studied at room temperature in the frequency range 1 Hz−50 kHz after irradiation with doses of 1012 ≤Ф≤ 6•1013 cm−2. Frequency dependence of the spectral noise density SI follows with good accuracy to the law SI∝1/f. The correlation between the saturation current of the output characteristics of Id(Vd) and the level of low-frequency noise is established. In the dose range Ф studied the value of the saturation current varies within about 20%, while the noise level changes by 2orders of magnitude. From the data of noise spectroscopy, the density of traps in the gate oxide, Ntv was estimated. In non-irradiated structures Ntv ≈5.4•1018cm−3•eV−1, at  = 6•1013 cm−2, Ntv increases to a value of Ntv ≈7.2•1019cm−3•eV−1.

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Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

Cited by 9 publications

References 27 publications

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Влияние протонного облучения (15 МэВ) на низкочастотный шум мощных SiC MOSFETs

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