2013
DOI: 10.12693/aphyspola.124.891
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Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

Abstract: Zinc oxide lms were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and uences 10 16 and 2 × 10 16 cm −2 . As-grown and irradiated samples were investigated by X-ray diraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.

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Cited by 5 publications
(3 citation statements)
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“… 14 An enlargement of the c -lattice parameter of hexagonal microcrystalline ZnO has been observed upon irradiation with 10 MeV electrons at a fluence of 10 16 electrons/cm 2 related to creation of complex defects. 13 A balance between the formation of defects and their annealing has been found, and the lattice of microcrystals has been relaxed when the fluence was increased twice. An interesting detailed mechanism has been suggested for the creation of the complex defects, which is based on the absence of emission bands corresponding to oxygen and zinc vacancies.…”
Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning
confidence: 96%
See 1 more Smart Citation
“… 14 An enlargement of the c -lattice parameter of hexagonal microcrystalline ZnO has been observed upon irradiation with 10 MeV electrons at a fluence of 10 16 electrons/cm 2 related to creation of complex defects. 13 A balance between the formation of defects and their annealing has been found, and the lattice of microcrystals has been relaxed when the fluence was increased twice. An interesting detailed mechanism has been suggested for the creation of the complex defects, which is based on the absence of emission bands corresponding to oxygen and zinc vacancies.…”
Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning
confidence: 96%
“…Creation of defects under electron irradiation of metal oxide films and their composites such as ZnO, In 2 O 3 , SnO 2 , and ZrO 2 –Al 2 O 3 was also the subject of numerous structural and optical (photoluminescence, spectroscopic ellipsometry, Fourier transform infrared (FTIR) spectroscopy) investigations. , In general, the defect formation observed is explained by bond breaking, while structural changes like amorphization are explained by excitation of the chemical bonds and subsequent atomic movements . An enlargement of the c -lattice parameter of hexagonal microcrystalline ZnO has been observed upon irradiation with 10 MeV electrons at a fluence of 10 16 electrons/cm 2 related to creation of complex defects . A balance between the formation of defects and their annealing has been found, and the lattice of microcrystals has been relaxed when the fluence was increased twice.…”
Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning
confidence: 99%
“…Most of the energy losses at high energy electron bombardment are caused by electron-electron collisions, rather than the electron-nucleus collisions. Electron-electron collisions lead to film heating, which results in radiation annealing and relaxation of the lattice [22]. Thus, interaction of electron with materials can be the key factor for induced modification of properties of materials.…”
Section: Introductionmentioning
confidence: 99%