2009
DOI: 10.1016/j.jallcom.2008.05.010
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Effect of high magnetic field on intermetallic phase growth in Ni–Al diffusion couples

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Cited by 48 publications
(9 citation statements)
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“…Therefore, the angle between DD and MFD (whether 0° or 180°) does not affect the experimental results. A similar conclusion to the one obtained here was obtained by studies that investigated the effect of a high magnetic field on the diffusion process [ 5 , 6 , 7 , 10 , 11 , 12 , 13 , 14 ]. They suggested that atomic diffusivity is affected by the frequency factor rather than the activation energy.…”
Section: Discussionsupporting
confidence: 90%
See 1 more Smart Citation
“…Therefore, the angle between DD and MFD (whether 0° or 180°) does not affect the experimental results. A similar conclusion to the one obtained here was obtained by studies that investigated the effect of a high magnetic field on the diffusion process [ 5 , 6 , 7 , 10 , 11 , 12 , 13 , 14 ]. They suggested that atomic diffusivity is affected by the frequency factor rather than the activation energy.…”
Section: Discussionsupporting
confidence: 90%
“…Recently, research on this subject has been focused on the effect of high magnetic fields on the atomic diffusion of diffusion couples in the paramagnetic/paramagnetic states (Al/Mg [ 5 , 6 ], Ni/Al [ 7 ], Ti/Ni [ 8 ], and Ti/Fe [ 9 ]) and paramagnetic/diamagnetic states (Al/Al–3% Cu [ 10 ], Cu/Ni [ 11 , 12 ], Fe/Fe–50 wt.% Si [ 13 ], Fe/Fe–20 wt.% Si [ 14 ]). Several studies [ 5 , 7 , 10 , 11 , 13 ] have suggested that a high magnetic field restrains atomic diffusion when the diffusion direction is perpendicular to the magnetic field. Other studies [ 6 , 12 , 14 ] have revealed that a high magnetic field parallel to the diffusion direction promotes the diffusion process.…”
Section: Introductionmentioning
confidence: 99%
“…The layer thickness decreasing is suggested to be related with the retardation of atom diffusion under the magnetic field, which is in well agreement with the above mentioned theory. Generally, such atom diffusion process is via atom-vacancy jump mechanism, in which the diffusion coefficient D could also be expressed as [17,18]:…”
Section: Resultsmentioning
confidence: 99%
“…ers occurs sequentially and not simultaneously [5][6][7]. Furthermore, phase formation sequence in these multilayers depends on their average chemical composition, modulation period and processing history [7,[8][9][10][11][12]. The influence of the modulation period has been definitely proven in a recently published detailed kinetic study [13].…”
Section: Introductionmentioning
confidence: 98%