2020
DOI: 10.1016/j.jallcom.2019.152106
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Effect of high pressure on structure characteristics and electrical transport properties of layered BiCuSeO oxyselenides

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Cited by 5 publications
(4 citation statements)
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“…BiCuSeO prepared via HPHT indicated that lattice parameters (a, c) showed a slight decrease with increasing synthesis pressure from 0.8 to 4 GPa (figure 2(A)) [47]. The analogous cases are observed frequently in Bi 2 Te 3 , PbTe, SiGe, etc, indicating that HPHT, similar to in-situ high-pressure technology, could decrease lattice parameters by applying pressure accompanied by quenching treatment [58][59][60].…”
Section: Crystal Structure and Pressurementioning
confidence: 84%
See 1 more Smart Citation
“…BiCuSeO prepared via HPHT indicated that lattice parameters (a, c) showed a slight decrease with increasing synthesis pressure from 0.8 to 4 GPa (figure 2(A)) [47]. The analogous cases are observed frequently in Bi 2 Te 3 , PbTe, SiGe, etc, indicating that HPHT, similar to in-situ high-pressure technology, could decrease lattice parameters by applying pressure accompanied by quenching treatment [58][59][60].…”
Section: Crystal Structure and Pressurementioning
confidence: 84%
“…For instance, the Rietveld refinement of XRD data of (A) Rietveld refinement were performed using XRD data of BiCuSeO synthesized at 0.8 and 4 GPa to achieve corresponding lattice parameters. Reprinted from [47], Copyright (2020), with permission from Elsevier. (B) The structural configurations of SnSe induced by pressure [48].…”
Section: Crystal Structure and Pressurementioning
confidence: 99%
“…[30] The pressure-induced stress can increase power factor to some extent via regulating the band structure, which can be partially trapped via constructing multiple microstructures during HPs. [31,32] These caused microstructures can also scatter phonons to reduce the thermal conductivity. [31] Some TE materials prepared through the HPs have shown good TE performance, especially for the CoSb 3 -based materials by increasing the filling fraction.…”
Section: Introductionmentioning
confidence: 99%
“…[31,32] These caused microstructures can also scatter phonons to reduce the thermal conductivity. [31] Some TE materials prepared through the HPs have shown good TE performance, especially for the CoSb 3 -based materials by increasing the filling fraction. [30,33] Given the above analysis, in this work, a two-step optimization strategy is conducted to improve the TE performance of ZnO, that is, carrier concentration optimization and carrier filtering effect.…”
Section: Introductionmentioning
confidence: 99%