Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics

Kahraman, Ayşegül; Mutale, Alex; Lök, Ramazan; Yılmaz, Ercan

doi:10.1016/j.radphyschem.2022.110138

Cited by 4 publications

(1 citation statement)

References 43 publications

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“…Many efforts have recently been devoted to investigating radiation response on the MOS structures using high dielectric constant materials [8], [9]. Also, the effects of gamma irradiation on structural, morphological, optical, and electrical properties of Zinc oxide (ZnO), Zinc (Zn) and Copper (Cu) nanowires [10]- [12].…”

Section: Introductionmentioning

confidence: 99%

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC

Mutale¹,

Yılmaz²,

Aytar³

2022

RAP Conference Proceedings

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The investigations of gamma irradiation response on silicon nanowires (SiNWs) based MOS capacitor with high-k of Yb2O3 is very important in the fields of semiconductors physics and nanotechnology. Hence, in this current work, we fabricated SiNWs using metal assisted chemical etching (MACE) technique and then Al/Yb2O3/SiNWs/n-Si (100)/Al MOS capacitor was exposed to gamma rays using Co-60 source at different doses of 0-4Gy, respectively. Our experimental results demonstrated that the capacitance value in the accumulation region decreased with increasing in the radiation dose, while the C-V curves shifted toward negative voltage side. In addition, the interface states density (Dit) increased with an increase in the gamma irradiation exposure. The value of Dit was found in the range of 6.98×10 09 eV -1 cm -2 and 1.14×10 10 eV -1 cm -2 .

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Section: Introductionmentioning

confidence: 99%

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC

Mutale¹,

Yılmaz²,

Aytar³

2022

RAP Conference Proceedings

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Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor

İzdeş,

Ertuğrul Uyar,

Tataroğlu

2024

J Mater Sci: Mater Electron

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This study aimed to investigate the influence of ionizing radiation on the admittance measurements of Titanium dioxide (TiO2)-based metal-insulator-semiconductor (MIS) capacitor. The capacitor was irradiated to a cumulative dose of 100 kGy using a 60Co-gamma (γ) source. The electrical admittance (Y = G + iωC) measurements of the MIS capacitor were performed before and after exposure to gamma irradiation for four different frequencies (1, 10, 100 and 500 kHz). Gamma irradiation leads to changes in the capacitance/conductance versus voltage (C/G–V) characteristics. The C and G showed a decrease by increasing the radiation dose and frequency. This decrease is attributed to the interface traps and oxide-trapped charges created during the gamma irradiation. The obtained results showed that the prepared MIS capacitor have great potential for dosimetry applications.

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Preparation of HfSiO4 via Non-Hydrolytic Sol-Gel method at low temperatures

Qiu,

Yang,

Huang

et al. 2024

Ceramics International

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Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics

Cited by 4 publications

References 43 publications

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC

Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor

Preparation of HfSiO4 via Non-Hydrolytic Sol-Gel method at low temperatures

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Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics

Cited by 4 publications

References 43 publications

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb2O3 GATE DIELECTRIC

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb2O3 GATE DIELECTRIC

Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor

Preparation of HfSiO4 via Non-Hydrolytic Sol-Gel method at low temperatures

Contact Info

Product

Resources

About

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC