2003
DOI: 10.1016/s0921-5107(03)00127-2
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Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition

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Cited by 308 publications
(133 citation statements)
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“…al. 25 In their report, the ZnO:Al film were prepared by pulsed laser deposition technique and the increase of resistivity with doping concentration above 2 at.% were attributed due to the sharp decrease of mobility.…”
Section: Resultsmentioning
confidence: 99%
“…al. 25 In their report, the ZnO:Al film were prepared by pulsed laser deposition technique and the increase of resistivity with doping concentration above 2 at.% were attributed due to the sharp decrease of mobility.…”
Section: Resultsmentioning
confidence: 99%
“…The interest in Al-doped ZnO is due to its improved electrical conductivity without compromising the transparency of the material in the visible region of light, [1][2][3][4] which makes the material applicable as a transparent conductive oxide. Aluminum-doped ZnO has also been found to exhibit unusually good thermoelectric properties for an oxide, reaching a figure-of-merit value as high as 0.3 at 1000 K. 5,6 For both optoelectronic and thermoelectric applications, the accurate control of the charge carrier density is a priority; it directly affects not only the electrical conductivity but also the Seebeck coefficient and thermal conductivity, i.e., the three properties that define the figure-of-merit for a thermoelectric material.…”
Section: Introductionmentioning
confidence: 99%
“…By contrast, the stress in the films deposited at higher substrate temperatures increased with the at.% of Mo, even when the stoichiometric ratio of Mo in ZnO was maintained in the films. This finding is attributed to the thermal stress induced by higher substrate temperatures [31]. The variation of stress with temperature and Mo at.% is shown in Fig.…”
Section: Structural Investigationsmentioning
confidence: 83%