MgB 2 -based bulk materials synthesized under 30 MPa-2 GPa pressure demonstrated an enhanced connectivity A F ∼ 50%−98%, as compared to most other reports (below 50%), and a shielding fraction of 75%-100%. The materials inhibit high critical current densities j c , but no strict correlation was found between A F and j c . On the other side, we found correlations between j c and the distribution of nanostructural inhomogeneities such as impurity oxygen in the form of oxygen-enriched Mg-B-O nanolayers or nanoinclusions and its solution in the MgB 2 matrix and as well with the amount and size of higher magnesium borides MgB x , x ≥ 4 inclusions. The distribution of boron-and oxygenenriched (as compared to stoichiometric MgB 2 ) inhomogeneities affects the type of pinning and, thus, j c , and to some extent, it can be regulated by synthesis temperatures and pressures and by Ti addition. Auger spectroscopy, scanning electron microscopy, and X-ray with Rietveld refinement were used for structural study.