Effect of holding time on SiC whiskers growth of SiCw/SiC composites based on SLS technology and their mechanical properties

Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

“…25) The resultant smaller α crit on 6H-SiC (000-1) successfully explained the rougher 6H-SiC (000-1) surface due to island-like growth at 1500 °C. 12) Judging from the reported shapes of SiC nanowires, [26][27][28][29] however, we considered SiC two-dimensional nuclei should be hexagonal prism shaped. Our consideration can also be supported by the anisotropy in lateral growth rates, i.e.…”