Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent p‐Type LaCuOS Semiconductor with Good Transmittance in Both Visible and Mid‐Infrared Ranges

Abstract

Transparent semiconductors play an important role in the modern electronics industry, as advanced devices such as optical windows, photovoltaic cells, and flat panel displays require such components. [1][2][3] However, because of their poor photoelectric properties, p-type transparent conductive materials (TCMs) are not used widely in the modern electronics industry, which has limited the development of devices such as touch-sensitive transparent thin-film transistors. [4][5][6][7] Hence, novel transparent p-type semiconductors with good photoelectric performance are required, for the continued development of advanced devices.Potential p-type TCMs applicable to semiconductors have been studied since 1997, when Hosono et al. proposed "chemical modulation of the valence band" (CMVB). p-type CuAlO 2 with a delafossite structure was obtained with this technique, [8][9][10] subsequently enabling the discovery and study of the CuMO 2 (M ¼ B, Al, Cr, etc.) family of materials. [11][12][13][14][15][16] However, delafossite materials either have low carrier mobilities or low carrier concentrations because of their high-valence band maximum (VBM) tail states. Thus, to improve their photoelectric properties, chalcogens have been used as a partial replacement for oxygen in the delafossite structure, because of their easier hybridization with Cu's 3d orbital electrons. [17,18] LaCuOS, the first p-type oxychalcogenide material, was developed based on this principle, and more LnCuOCh materials (Ln ¼ La, Nd, Ce, etc. and Ch ¼ S, Se, and Te) have subsequently been studied. Generally, transparent p-type LnCuOCh semiconductors are prepared using magnetron sputtering, pulsed laser deposition, or solid-state reaction techniques. [19][20][21][22][23] However, as well as being costly and difficult

Topochemical Anionic Subunit Insertion Reaction for Constructing Nanoparticles of Layered Oxychalcogenide Intergrowth Structures

“…EDS quantification indicates a composition of LaOCu 0.62 S 0.59 , which is close to the Cu:La ratio used in the reaction (Table S3) and corresponds roughly to (LaO x ) 0.4 @(LaOCuS) 0.6 core–shell particles. XPS data also indicate an oxide-rich surface containing La (14%), O (38%), Cu (4%), and S (6%) (Figure S7) with oxidation states of La 3+ , Cu + , O 2– , and S 2– , consistent with literature XPS data for LaOCuS; − Cl is at background levels. When the reaction is stopped early, the amount of residual Cl is greater than that at the full 60 min reaction time (Figures e, S8, and S9 and Tables S4 and S5).…”