2000
DOI: 10.1103/physrevb.61.7595
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Effect of homogeneous broadening of optical gain on lasing spectra in self-assembledInxGa1xA

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Cited by 285 publications
(201 citation statements)
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“…Experimental results are also compared to calculations derived from a numerical model. Let us note that a considerable work has already been devoted to model QD lasers based on InAs/GaAs system, consistent with TRPL (Bimberg et al 1997) and EL measurements (Bhattacharyya et al 1999, Sugawara et al 2000.…”
Section: Introductionmentioning
confidence: 88%
“…Experimental results are also compared to calculations derived from a numerical model. Let us note that a considerable work has already been devoted to model QD lasers based on InAs/GaAs system, consistent with TRPL (Bimberg et al 1997) and EL measurements (Bhattacharyya et al 1999, Sugawara et al 2000.…”
Section: Introductionmentioning
confidence: 88%
“…Thus, a different picture appears where QDs at room temperatures are significantly broadened by intrinsic mechanisms. This, on the one hand, reduces the expected superior performances based on a delta-like density of states in real QD lasers, on the other hand, it implies a different behavior in the laser action 6 where all the spectral gain participate to lasing, important for cw high-power applications. In view of this scenario, a better understanding of the processes associated with the observed homogeneous broadening in QDs at room temperature is crucial for further development of QD-based devices.…”
Section: Coherent Versus Incoherent Dynamics In Inas Quantummentioning
confidence: 97%
“…3 As cladding layers and a ridge structure of 8 m width and ϳ500 m length provide optical confinement and wave guiding. 6 The active region consists of three stacked layers of QDs separated by 21 nm thick GaAs barriers and placed in the center of a 120 nm GaAs layer. Electrical injection allowed laser action, 8,5 however in this work we concentrate on the QD absorption dynamics without bias current.…”
Section: Coherent Versus Incoherent Dynamics In Inas Quantummentioning
confidence: 99%
“…The accomplishment of these low dimensional devices may also be ascribed to the theoretical modeling of these devices that has provided a great insight on their performance characteristics. For instance, the simulation model of quantum dot semiconductor lasers [4,5], the quantum well lasers [6] has helped in designing and fabrication of these structures for optimum performance.…”
Section: Introductionmentioning
confidence: 99%