Spontaneous degradation
of 2D transition-metal dichalcogenides/chalcogenides
(TMDs/MCs) gas sensors in dry/wet air represents one of the most significant
drawback of these interfaces, hampering the reproducibility of the
baseline resistance and sensor’s signal stability (i.e., sensor’s
creep). Herein, we report a simple protection strategy stimulating
the formation of a self-assembled oxide (a-MO
x
) over TMDs/MCs, which promotes effective
passivation of the underlying surface and excellent gas sensing response.
Liquid-phase-exfoliated few-layers 2D-In2Se3 have been annealed in air at 180 °C for 24 h to yield an a-In2O3/In2Se3 heterostructure comprising a self-assembled a-In2O3 amorphous skin (5–10 nm) over 2D-crystalline
In2Se3 (5–30 nm). The isomorphic conversion
of In2Se3 into a-In2O3 specifically enables the layered shape of the precursor
2D-In2Se3 to be preserved after annealing, therefore
providing all the surface-to-volume advantages of 2D interfaces. The
excellent baseline and sensor’s signal reproducibility to H2 (5–100 ppm) and NO2 (400 ppb–1 ppm)
after 1 year of delivery at 100 °C operating temperature demonstrated
that the oxide skin effectively passivates the underlying 2D-In2Se3 from further oxidation. Significantly, the a-In2O3/In2Se3 heterostructure shows better H2 sensing response with
respect to 2D TMDs/MCs sensors, with experimental detection limits
as low as 5 ppm H2 and 400 ppb NO2, with associated
RR (R
a/R
g)
= 2.1 to 100 ppm H2 and RR (R
g/R
a) = 2.3 to 1 ppm NO2 in
dry air. A charge carrier mechanism between the a-In2O3/In2Se3 heterostructure
and H2, NO2, and H2O molecules is
presented to discuss the humidity cross response to H2 and
NO2. The passivation strategy here proposed can be extended
to a large variety of TMDs/MCs, opening new perspectives for the effective
exploitation of layered amorphous gas-sensing interfaces.