2015
DOI: 10.1016/j.mssp.2015.04.053
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Effect of hydrazine hydrate concentration on structural, surface morphological and optoelectronic properties of SILAR deposited PbSe thin films

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Cited by 19 publications
(4 citation statements)
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References 31 publications
(28 reference statements)
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“…In other synthesis procedures, a decrease in crystallinity has been observed when samples have been prepared with very high doses of hydrazine [29]. The development of plate like morpholo gies with low doses or the presence of morphologies slightly dis torted depends seriously on the concentration applied [46,47] or the way as hydrazine be applied [30].…”
Section: Effect Of Experimental Conditions On the Morphology Shape And Particle Sizementioning
confidence: 99%
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“…In other synthesis procedures, a decrease in crystallinity has been observed when samples have been prepared with very high doses of hydrazine [29]. The development of plate like morpholo gies with low doses or the presence of morphologies slightly dis torted depends seriously on the concentration applied [46,47] or the way as hydrazine be applied [30].…”
Section: Effect Of Experimental Conditions On the Morphology Shape And Particle Sizementioning
confidence: 99%
“…Hydrazine, an inorganic compound (N 2 H 4 ) is a highly reactive base, used widely as reducing agent, with low cost, being highly toxic in high and low doses [27,28]. However, to control the struc tural and surface morphology of nanomaterials, aqueous solutions of hydrazine turn out very useful [29,30]. Besides, the role of nitrates in different concentrations has been demonstrated to be important in the control of particle size [31,32].…”
Section: Introductionmentioning
confidence: 99%
“…These include cubes [24], rods [3], octahedron [25], rod with cube at the tip [20], rod interdispersed with cubes [21], spheres [26] mesh-like structures [27], stars [28], pyramid [29], wires [30] and dendrites [31]. PbS is a group IV–VI semiconductor which possesses much higher dielectric constants ( ε ) and lower effective mass for the electron and the hole [32]. It is a direct band gap semiconductor with an exciton Bohr radius of 18 nm and a narrow band gap of 0.41 eV [21].…”
Section: Introductionmentioning
confidence: 99%
“…The purpose of the present study was to explore the feasibility of synthesis of the manganite layers by SILD method [25] , also called the successive ionic layer adsorption and reaction (SILAR) [26,27] . The method is based on multiple and successive treatment of substrate by solutions of reagents which enter into reaction at its surface and form a layer of poorly soluble substance.…”
mentioning
confidence: 99%