Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD*

Zhang, Yudong; Tang, Jiale; Hu, Yongjie; Yuan, Jie; Guan, Lulu; Li, Xingyu; Cui, Hushan; Ding, Guanghui; Shi, Xinying; Xu, Kaidong; Zhuang, Shiwei

doi:10.1088/1674-1056/abea82

Cited by 5 publications

(4 citation statements)

References 25 publications

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“…Possessing an increased density and uniformity of the distribution of particles over the cross-section of the reactor, such a plasma provides greater uniformity of the films over the entire area of the substrate [30]. At low pressure and low deposition temperature, ICP CVD produces high-quality films such as SiN x :H [31,32], SiO x N y [33], SiO 2 /SiN x film stacks [34], and SiC x N y :H [35]. Previously, we used this technique for the synthesis of SiC x N y O z :H and SiC x N y :H films by decomposition of hexamethyldisilazane and hexamethylcyclotrisilazane as precursors [36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

et al. 2022

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Amorphous hydrogenated silicon carbonitride films were synthesized on Si(100), Ge(111), and fused silica substrates using the inductively coupled plasma chemical vapor deposition technique. 1,1,3,3-tetramethyldisilazane (TMDSN) was used as a single-source precursor. The effect of the precursor’s pressure in the initial gas mixture, the substrate temperature, the plasma power, and the flow rate of nitrogen gas as an additional reagent on the film growth rate, element composition, chemical bonding, wettability of film surface, and the optical and mechanical properties of a-SiCxNy:H films was investigated. In situ diagnostic studies of the gas phase have been performed by optical emission spectroscopy during the film deposition process. The long-term stability of films was studied over a period of 375 days. Fourier-transform infrared (FTIR) and X-ray energy dispersive spectroscopy (EDX), and wettability measurements elucidated the oxidation of the SiCxNy:H films deposited using TMDSN + N2 mixture. Films obtained from a mixture with argon had high stability and maintained the stability of element composition after long-term storage in ambient air.

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Section: Introductionmentioning

confidence: 99%

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

et al. 2022

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“…Inductively Coupled Plasma (ICP) has been widely used for crystal etching 1 , semiconductor etching 2 , thin film deposition 3 , material surface modification 4 , 5 and so on. However, accurate and skilled use of these processes requires a clear understanding of the various ICP control factors such as ICP internal pressure and absorbed power.…”

Section: Introductionmentioning

confidence: 99%

Local pressure calibration method of inductively coupled plasma generator based on laser Thomson scattering measurement

Sun¹,

Liu²,

Zheng³

et al. 2022

Sci Rep

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Based on laser Thomson scattering (TS) measurements and finite element method (FEM) simulations of electron density in inductively coupled plasma (ICP), the simulated local pressure calibration curves of ICP generator are obtained by comparing the experimental and simulated electron density distributions and maxima. The equation coefficients of theoretical model associated with the ICP generator experimental system can be obtained by fitting the simulation curve with the least square method, and the theoretical pressure calibration curves under different absorbed powers can be further obtained. Combined with the vacuum gauge measurements, both the simulated and theoretical pressure calibration curves can give the true local pressure in the plasma. The results of the local pressure calibration at the different absorbed powers show that the density gradient from the vacuum gauge sensor to the center of the coil in ICP generator cavity becomes larger with the increase of electron density, resulting in a larger gap between the measured value and the pressure calibration value. This calibration method helps to grasp the local pressure of ICP as an external control factor and helps to study the physicochemical mechanism of ICP in order to achieve higher performance in ICP etching, material modification, etc.

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“…2005; Zhang et al. 2021 a ). Inductively coupled plasma is also widely used for crystal etching (Song et al.…”

Section: Introductionmentioning

confidence: 99%

“…An ICP is characterized by high electron density at low pressure, relative simplicity of the device and no need for an additional applied magnetic field. As a low-temperature and high-density plasma source, ICP is beginning to be used in the etching of integrated circuits because of its high etch selectivity for fine etching of large substrates without the tedious steps of wet etching and because the process can be controlled (Smith et al 2005;Zhang et al 2021a). Inductively coupled plasma is also widely used for crystal etching (Song et al 2020), thin-film deposition (Zhang et al 2021b) and material surface modification (Frye et al 2021).…”

Section: Introductionmentioning

confidence: 99%

Validation of inductively coupled plasma simulation model by laser Thomson scattering experiment

Sun¹,

Shi

et al. 2023

J. Plasma Phys.

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To comprehensively study the physical properties of inductively coupled plasma (ICP), a finite element method (FEM) simulation model of ICP is developed using the well-established COMSOL software. To benchmark the validation of the FEM model, two key physical parameters, the electron density and the electron temperature of the ICP plasma, are precisely measured by the state-of-the-art laser Thomson scattering diagnostic approach. For low-pressure plasma such as ICP, the local pressure in the generator tube is difficult to measure directly. The local gas pressure in the ICP tube has been calibrated by comparing the experimental and simulation results of the maximum electron density. And on this basis, the electron density and electron temperature of ICP under the same gas pressure and absorbed power have been compared by experiments and simulations. The good agreement between the experimental and simulation data of these two key physical parameters fully verifies the validity of the ICP FEM simulation model. The experimental verification of the ICP FEM simulation model lays a foundation for further study of the distribution of various physical quantities and their variation with pressure and absorption power, which is beneficial for improving the level of ICP-related processes.

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Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD*

Cited by 5 publications

References 25 publications

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

Local pressure calibration method of inductively coupled plasma generator based on laser Thomson scattering measurement

Validation of inductively coupled plasma simulation model by laser Thomson scattering experiment

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