Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

Zatryb, G.; Klak, M.M.; Wójcik, J.; Misiewicz, J.; Mascher, P.; Podhorodecki, A.

doi:10.1063/1.4939199

Cited by 6 publications

(4 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some investigations have also been carried out on Tb 3+ : SiC(N) materials [8][9][10] as well as on the silicon rich silicon oxide films (Tb 3+ :SRSO) [11] with CMOS devices [12]. However, the incorporation of silicon excess in SRSO, contributing to the formation of Si nanoclusters, significantly reduced the emission intensity of lanthanide ions as a result of a strong non-radiative recombination [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Labbé¹,

An²,

Zatryb³

et al. 2017

Nanotechnology

View full text Add to dashboard Cite

Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb ion doped nitrogen-rich silicon oxynitride (NRSON) thin films were fabricated using a reactive magnetron co-sputtering method, with various N flows and annealing conditions, in order to study their structural and emission properties. Rutherford backscattering (RBS) measurements and refractive index values confirmed the silicon oxynitride nature of the films. An electron microscopy analysis conducted for different annealing temperatures (T ) was also performed up to 1200 °C. Transmission electron microscopy (TEM) images revealed two different sublayers. The top layer showed porosities coming from a degassing of oxygen during deposition and annealing, while in the region close to the substrate, a multilayer-like structure of SiO and SiN phases appeared, involving a spinodal decomposition. Upon a 1200 °C annealing treatment, a significant density of Tb clusters was detected, indicating a higher thermal threshold of rare earth (RE) clusterization in comparison to the silicon oxide matrix. With an opposite variation of the N flow during the deposition, the nitrogen excess parameter (N) estimated by RBS measurements was introduced to investigate the Fourier transform infrared (FTIR) spectrum behavior and emission properties. Different vibration modes of the Si-N and Si-O bonds have been carefully identified from the FTIR spectra characterizing such host matrices, especially the 'out-of-phase' stretching vibration mode of the Si-O bond. The highest Tb photoluminescence (PL) intensity was obtained by optimizing the N incorporation and the annealing conditions. In addition, according to these conditions, the integrated PL intensity variation confirmed that the silicon nitride-based host matrix had a higher thermal threshold of rare earth clusterization than its silicon oxide counterpart. Analysis of time-resolved PL intensity versus T showed the impact of Tb clustering on decay times, in agreement with the TEM observations. Finally, PL and PL excitation (PLE) experiments and comparison of the related spectra between undoped and Tb-doped samples were carried out to investigate the impact of the band tails on the excitation mechanism of Tb ions.

show abstract

Section: Introductionmentioning

confidence: 99%

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Labbé¹,

An²,

Zatryb³

et al. 2017

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…As a matter of fact, this kind of transition was suggested as the excitation mechanism of Tb 3+ and Ce 3+ ions in crystalline α-Si 3 N 4 powders [37]. From this point of view, the large broadening of B3 could be due to electron-phonon coupling which is usually very strong for f-d transitions [38][39][40].…”

Section: B3mentioning

confidence: 97%

Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films

et al. 2019

Self Cite

View full text Add to dashboard Cite

In this work, silicon nitride films containing terbium were deposited by reactive magnetron co-sputtering in a nitrogen enriched plasma and subjected to rapid thermal annealing treatments. The influence of annealing temperature on the emission and absorption properties of these films was investigated by photoluminescence, photoluminescence decay and photoluminescence excitation measurements. An increase in the photoluminescence intensity and photoluminescence decay time was observed upon annealing for the main 5 D 4 -7 F 5 transition of Tb 3+ ions. This observation was attributed to decrease of the non-radiative recombination and increase of the number of excited Tb 3+ ions upon annealing. Moreover, high temperature annealing was found to shift the spectral position of absorption bands observed in the photoluminescence excitation spectra. In general, these excitation spectra were shown to have a rather complicated structure and were decomposed into three Gaussian bands. It was suggested that two of these excitation bands might be due to indirect excitation of Tb 3+ ions via defects and the third excitation band could be due to direct 4f-5d transition.

show abstract

“…The diamond layers obtained by the HF CVD method are polycrystalline in nature and contain a high concentration of different defects, such as

phase admixtures, dislocations, vacancies, and dangling bonds. [ 8 , 9 , 10 , 11 , 12 ].For many semiconductors, it is known that the behavior of hydrogen is very complex, including the termination of dangling bonds, passivation of shallow and deep levels, and creation of extended defects [ 13 , 14 ]. In order to explain the high surface conductivity of diamonds, several models have been proposed.…”

Section: Introductionmentioning

confidence: 99%

The n–Si/p–CVD Diamond Heterojunction

et al. 2020

View full text Add to dashboard Cite

Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing devices. The proper tuning of the deposition parameters allows us to develop the diamond layers with varying crystallinity and defect structure, as was shown by SEM and Raman spectroscopy investigations. The cathodoluminescence (CL) spectroscopy revealed defects located just in the middle of the energy gap of diamonds. The current–voltage–temperature, I−V−T characteristics performed in a broad temperature range of 77–500 K yielded useful information about the electrical conduction in this interesting material. The recorded I−V−T in the forward configuration of the n–Si/p–CVD diamond heterojunction indicated hopping trough defects as the primary mechanism limiting conduction properties. The Ohmic character of the carriers flux permitting throughout heterojunction is intensified by charges released from the depletion layer. The magnification amplitude depends on both the defect density and the probability that biasing voltage is higher than the potential barrier binding the charge. In the present work, a simple model is proposed that describes I−V−T characteristics in a wide range of voltage, even where the current saturation effect occurs.

show abstract

Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

Cited by 6 publications

References 30 publications

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films

The n–Si/p–CVD Diamond Heterojunction

Contact Info

Product

Resources

About

Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

Cited by 6 publications

References 30 publications

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films

The n–Si/p–CVD Diamond Heterojunction

Contact Info

Product

Resources

About

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films