Effect of <i>in-situ</i> SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

Zhang, Haochen; Chen, Yao; Sun, Yue; Yang, Lei; Hu, Kunpeng; Huang, Zhenguo; Liang, Kun; Xing, Zhanyong; Wang, Hu; Zhang, Mingshuo; Guo, Shiping; Sun, Haiding

doi:10.1063/5.0146447

Cited by 10 publications

(3 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To verify this, we have fabricated gallium nitride (GaN)-based high-electron-mobility transistors (HEMT) with a heterogeneously integrated SrTiO 3 gate oxide layer and characterized its performance. We find that with careful fabrication and transfer of the gate oxide membrane, the device performance in regard to the oxide/HEMT interface show excellent quality, matching or exceeding that of conventionally deposited amorphous gate oxides as well as in-situ grown SiN oxides 6 – 8 .…”

Section: Introductionmentioning

confidence: 84%

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Ji,

Yang,

Lee

et al. 2024

Commun Eng

View full text Add to dashboard Cite

Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is performed on crystallographically different materials. However, epitaxial limitations in monolithic growth of dissimilar materials prevent implementation of high quality heterostructures, such as complex-oxides on conventional semiconductor platforms (Si, III-V and III-N). In this work, we demonstrate gallium nitride (GaN) high-electron-mobility transistors with crystalline complex-oxide material enabled by heterogeneous integration through epitaxial lift-off and direct stacking. We successfully integrate high-κ complex-oxide SrTiO3 in freestanding membrane form with GaN heterostructure via a simple transfer process as the gate oxide. The fabricated device shows steep subthreshold swing close to the Boltzmann limit, along with negligible hysteresis and low dynamic on-resistance, indicating very low defect density between the SrTiO3 gate oxide and GaN heterostructure. Our results show that heterogeneous integration through direct material stacking is a promising route towards fabricating functional heterostructures not possible by conventional epitaxy.

show abstract

Section: Introductionmentioning

confidence: 84%

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Ji,

Yang,

Lee

et al. 2024

Commun Eng

View full text Add to dashboard Cite

show abstract

“…GaN-based HEMTs have established themselves as the competitive candidates as power and RF electronics [1][2][3][4][5]. Especially, the enhancement-mode (E-mode) HEMTs with the normally-OFF operation are more favorable for safe operation in power electronic systems [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

Ye,

Zhang,

Xing

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The p-GaN gated E-mode HEMTs (P-HEMTs) are being extensively studied for emerging power electronics. However, the devices still suffer from performance trade-off among threshold voltage (VTH), output drain current (IDS), and breakdown voltage (VBD). Herein, we propose P-HEMTs with a stair-like p-GaN cap layer to boost their performance. The p-GaN cap layer is composed of four discrete p-GaN staircases with the decreased thickness to the right (Right-Stair P-HEMT, RSP-HEMT) or to the left (Left-Stair P-HEMT, LSP-HEMT). It is found that the RSP-HEMT simultaneously achieves the 1.3-times increased IDS, 160 V enhanced VBD, and improved VTH stability against drain-induced barrier lowering (DIBL) effects, compared with the LSP-HEMT and the conventional BaSeline P-HEMT (BSP-HEMT). These device merits should be attributed to the effective manipulation of the lateral electric field (EF) under all bias conditions by the unique band structures enabled by the RSP configuration. Such EF manipulation strategies to improve device characteristics offer us helpful guidance and insights to further propel the development of high-performance E-mode P-HEMTs of the future.

show abstract

“…GaN-based high-electron-mobility transistors (HEMTs) have established themselves as the competitive candidates for the emerging power and RF electronics [1][2][3][4][5][6][7][8][9][10]. However, the construction of logic units based on such device technologies still faces major challenges.…”

Section: Introductionmentioning

confidence: 99%

GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

Xing,

Zhang,

et al. 2024

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Herein, a novel enhancement-mode (E-mode) GaN-based p-channel FETs (p-FETs) with a linearly graded AlGaN (LGA) p-channel is proposed and numerically studied by Silvaco TCAD. Thanks to strong polarization-induced doping, three-dimensional hole gas (3DHG) can be uniformly generated in LGA to form a continuous p-channel with a hole concentration over 1018 cm–3. Combined with an optimized recessed gate structure, the LGA p-FET can simultaneously achieve a large threshold voltage (|V TH|) > 2 V and a high current density (|J DS|) of ∼10 mA mm−1 at V DS = −10 V. Additionally, two critical parameters of the LGA p-FETs, i.e. the depth of recessed gate and initial Al composition of LGA, are specifically studied to reveal the unique carrier behavior of 3DHG in the devices. Importantly, the LGA structure is further optimized and implemented as the p-type cap layer to construct an E-mode GaN n-FET. Thereby, based on the same LGA configuration, a GaN-based inverter with the matched complementary n- and p-FETs is monolithically constructed, showing sharp voltage transition. The reported novel LGA structure and its availability in both GaN-based E-mode n- and p-FETs provides valuable insights and guidance to construct highly efficient GaN p-type devices and All-GaN-based integrated circuits for compact power electronic systems.

show abstract

Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

Cited by 10 publications

References 36 publications

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

Contact Info

Product

Resources

About