Effect of III-V nitrides on performance of graphene based SPR biosensor for detection of hemoglobin in human blood sample: A comparative analysis

Mohanty, Goutam; Sahoo, Bijaya Ku

doi:10.1016/j.cap.2016.09.006

Cited by 8 publications

(8 citation statements)

References 34 publications

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“…Fig. 7 presents (αhν) 2 & E of the material for different N rates. values of the material were obtained to be 3.54, 3.51, 3.48, 3.45, 3.41 for 0, 1, 2 3, 4 sccm , respectively, giving in Table 5.…”

Section: Optical Bandgap Energymentioning

confidence: 99%

“…Semiconductors of III-nitrides have been an important field of study to develop devices in optoelectronic applications [1]. Lately, several researchers studied them to apply high technology [2]. Gallium Nitride (GaN) has been material from group of III-nitrides and has noteworthy physical parameters (thermal stability, direct-wide bandgap, high-melting-point [3] high electron mobility [4], high breakdown voltage [5], mechanical hardness.…”

Section: Introductionmentioning

confidence: 99%

“…αhν)2 & E of the material for different N rates For (αhν) 2 = 0 , linear lines were plotted to achieve optical bandgap of the material.…”

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confidence: 99%

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n-Si / GaN ince filmlerin karakterizasyonu: azot akış hızının etkisi

Mantarcı

2020

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The GaN thin film was fabricated on n-type Si by a Radio Frequency magnetron sputtering method with applied various nitrogen (N) rates. The XRD confirmed the produced film had in a polycrystalline structure (orientations (110) and (100)). It was seen that different N rates varied structural parameters of fabricated material. The optical analysis showed that various N rates changed thin film optical-band gap energy by reason of reduced N vacancy. The AFM pictures demonstrated almost homogeneous with periodic grain arrangements, Nano-structured surface of GaN thin film. From SEM pictures, we detected agglomerations on the surface of the GaN thin film. Possible causes of them were deeply discussed. Raman results proved the corresponding characteristic E 2 (high) peak of the hexagonal GaN and exhibited that all thin films had tensile stress. Reasons of this stress were discussed. Optical, morphological, structural parameters of thin film can be improved with controlling N rates. Produced thin films can be basic material in device applications such as solar cells, Light Emitting Diode (LED). n-Si / GaN ince filmlerin fiziksel özellikleri: farklı N oranı etkisi Keywords RF saçtırma tekniği, GaN, N oranı, III-nitrür Öz: GaN ince filmi, Radyo Frekansı magnetron saçtırma yöntemi ile n-tipi Si üzerinde farklı N oranları uygulanarak üretildi. XRD analizleri üretilen filmin polikristal yapıda olduğunu (oryantasyon (110) ve (100)) teyit etmiştir. Farklı N oranlarında malzemenin yapısal parametrelerinin değiştiği görülmektedir. Optik analiz, çeşitli N oranlarının Azot boşluğunun azalması nedeniyle ince film optik bant boşluk enerjisini değiştirdiğini göstermektedir. AFM resimleri, GaN ince filminin Nano yapılı bir yüzeye sahip olduğunu ve periyodik tanecik yapısı gösterdiğini neredeyse homojen olan yapıyı göstermiştir. SEM resimlerinden GaN ince filminin yüzeyinde topaklar tespit ettik. Bunların olası nedenleri detaylı tartışıldı. Raman sonuçları, altıgen GaN'nin karşılık gelen karakteristik E 2 (yüksek) optic fonon titreşimini kanıtlamıştır ve tüm ince filmlerin sıkıştırma gerginliğine sahip olduğunu göstermiştir. Filmde oluşan bu stresin nedenleri tartışıldı. GaN ince filmin optik, morfolojik, yapısal parametreleri N oranlarının kontrol edilmesiyle iyileştirilebildiği bulunmuştur. Üretilen ince filmler, güneş pilleri, Işık Yayan Diyot (LED) gibi cihaz uygulamalarında temel malzeme olabilmektedir.

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Section: Optical Bandgap Energymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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n-Si / GaN ince filmlerin karakterizasyonu: azot akış hızının etkisi

Mantarcı

2020

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“…The surface plasmon resonance condition may be achieved after proper matching of wave vector of p-polarized incident light coupled through prism, grating or waveguide with surface plasmon wave (SPW) [ 15 , 16 ]. The resonance condition is very sensitive to change in RI of analyte medium after attachment of biomolecules onto biosensor surface [ 15 – 17 ]. The RI of the Hb acts as a biomarker of dysfunctions and pathologies caused by various diseases [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

“…The group obtained concentration sensitivity (S c ) (0.005°/gl −1 ) and resolution (0.18 g/l) for their work [ 16 ]. In 2016, Mohanty et al have analyzed effect of nitrides in graphene-based SPR biosensor for the detection of hemoglobin, to enhance the concentration sensitivity (S c ) and resolution up to 0.286°/gdl −1 or (0.0286°/gl −1 ) and 0.00350 g/dl or (0.035 g/l), respectively [ 17 ]. Recently, Keshavarz et al used Au/graphene/WS 2 SPR configuration for the monitoring the Hb level in human blood with maximum RI sensitivity (S R ) of 235.24°/RIU [ 2 ].…”

Section: Introductionmentioning

confidence: 99%

A nanolayered structure for sensitive detection of hemoglobin concentration using surface plasmon resonance

et al. 2021

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The objective of the proposed work is to design a biosensor that monitors hemoglobin (Hb) concentration using the combination of nanolayer, i.e., barium titanate (BaTiO 3 ) and antimonene based on surface plasmon resonance (SPR) technique. Antimonene is used here as bio-recognition element (BRE) layer to attach the Hb analyte through physical adsorption due to its hydrophilic nature, higher adsorption energy and larger active surface area. The use of BaTiO 3 adlayer (7 nm) just before antimonene is to enhance the refractive index (RI) sensitivity up to 1.90 times for the proposed SPR biosensor. The reason behind sensitivity enhancement is its high dielectric constant which enhances the electromagnetic field with in analyte medium. The performance of the biosensor is demonstrated with performance parameters namely sensitivity, detection accuracy (DA), figure of merit (FOM) and resolution. The proposed biosensor has potential to achieve much higher performance in terms of RI sensitivity of 303.83°/RIU, FOM of 50.39 RIU −1 and resolution of 0.021 g/l in comparison with reported biosensors in the literature for detection of Hb concentration. Thus, based on the obtained results one can say that the proposed work unlocks a reliable sensing in the field of medical science to detect hemoglobin-related diseases in human being.

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