Effect of illumination intensity on a self-powered UV photodiode based on solution-processed NPD:Alq3 composite system

Alzahrani, Hanan; Sulaiman, Khaulah; Muhammadsharif, Fahmi F.; Abdullah, Shahino Mah; Mahmoud, Alaa Y.; Bahabry, Rabab R.; Sani, Siti Fairus Ab

doi:10.1007/s10854-021-06034-x

J Mater Sci: Mater Electron

2021

DOI: 10.1007/s10854-021-06034-x

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Effect of illumination intensity on a self-powered UV photodiode based on solution-processed NPD:Alq3 composite system

Hanan Alzahrani

Khaulah Sulaiman

Fahmi F. Muhammadsharif

et al.

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Cited by 4 publications

References 73 publications

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A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

Surucu,

Yıldız,

Yıldırım

2024

Appl. Phys. A

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This work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal–organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current–voltage (I–V), current–time (I–t), capacitance–time (C–t), and conductance time (G–t). The photodiode’s rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (Rs) and shunt resistance (Rsh). Rs values are calculated using Cheung’s functions, revealing the diode’s resistance behavior. The study also examines the photodiode’s photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device’s light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode’s behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.

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A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

Surucu,

Yıldız,

Yıldırım

2024

Appl. Phys. A

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The synthesis and photoelectrical performances of perylenediimide-based devices as an interface layer in metal-organic-semiconductors

Yiğit¹,

Sevgili²,

Bayındır³

et al. 2022

Materials Science and Engineering: B

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Dependence of electrical parameters of co/gold-chloride/p-Si diode on frequency and illumination

et al. 2021

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Effect of illumination intensity on a self-powered UV photodiode based on solution-processed NPD:Alq3 composite system

Cited by 4 publications

References 73 publications

A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

The synthesis and photoelectrical performances of perylenediimide-based devices as an interface layer in metal-organic-semiconductors

Dependence of electrical parameters of co/gold-chloride/p-Si diode on frequency and illumination

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